Associate Professor Yin-Yin Jennifer Wong Leung

1991 BSc Hons Physics (University of Bristol, UK), 1998 PhD Electronic Materials (ANU)
Senior Fellow
College of Science

Areas of expertise

  • Elemental Semiconductors 091204
  • Surfaces And Structural Properties Of Condensed Matter 020406
  • Compound Semiconductors 091203
  • Soft Condensed Matter 020405
  • Photonics, Optoelectronics And Optical Communications 020504
  • Metals And Alloy Materials 091207
  • Condensed Matter Physics 0204
  • Electrical And Electronic Engineering 0906
  • Materials Engineering 0912
  • Nanotechnology 1007

Research interests

  • TEM of solar cell device structures for enhanced photovoltaic performance
  • control over crystal structure, composition and homogeneity of ternary III-V nanowires
  • materials challenges in ZnO
  • TEM of nanowires
  • Light emission in ion implanted Silicon
  • ion implantation in Silicon Carbide


Jenny Wong-Leung is currently both a senior fellow at the Research School of Physics and Engineering and the materials science microscopist at the Centre for Advanced Microscopy. She first obtained a bachelor of science in Physics with honours at the University of Bristol in UK in 1991. She then completed a PhD degree at the Australian National University in 1997 with her PhD thesis titled “The gettering of metals in silicon to defects induced by ion implantation’. During this period, she spent 3 months as a visiting student at A.T & T. Bell Laboratories in the US working on the effect of Fe contamination on gate oxide. She was the recipient of an ARC postdoctoral fellowship (1998-2001) which was focused on implantation induced defects in silicon and also an ARC QEII fellowship (2002-2007) based on “Ion implantation in Silicon Carbide for microelectronics applications”. Her main interests are in the structural and electrical characterisation of semiconductors. She has also been involved in defect characterisation in ion implanted semiconductors, as grown semiconductor heterostructures and nanostructures. She has worked with a range of semiconductors, Si, SiC, ZnO, III-V semiconductors such as GaAs, InAs, GaP, InP, InGaAs and AlGaAs. Her expertise in semiconductors are in ion implantation defects in semiconductors with prime techniques like transmission electron microscopy, deep level transient spectroscopy, Rutherford backscattering spectrometry. She has been involved in close collaborations with research groups in US, Sweden, Norway and the UK.

Researcher's projects

Dopants, defects and related issues in Zinc Oxide


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Updated:  02 July 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers