Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Citation

Tran, T, Alkhaldi, H, Gandhi, H et al 2016, 'Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer', Applied Physics Letters, vol. 109, no. 8, pp. -.

Year

2016

Fields of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges
  • Polymers And Plastics
  • Nanomaterials

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