Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon

Citation

Harding, R, Davies, G, Tan, J et al. 2006, 'Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon', Journal of Applied Physics, vol. 100, pp. 073501-1-4.

Year

2006

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Materials Engineering Not Elsewhere Classified
  • Renewable Power And Energy Systems Engineering (Excl. Solar Cells)

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