Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon
Citation
Harding, R, Davies, G, Tan, J et al. 2006, 'Identification by Photoluminescence and Positron Annihilation of Vacancy and Interstitial Instrinsic Defects in Ion-implanted Silicon', Journal of Applied Physics, vol. 100, pp. 073501-1-4.Year
2006ANU Authors
Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Materials Engineering Not Elsewhere Classified
- Renewable Power And Energy Systems Engineering (Excl. Solar Cells)
