Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

Citation

Wong Leung, Y & Svensson, B 2008, 'Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC', Applied Physics Letters, vol. 92, no. 14, pp. 1-3.

Year

2008

Fields of Research

  • Compound Semiconductors
  • Condensed Matter Physics Not Elsewhere Classified

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