Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Citation

Johnson, B, Villis, B, Burgess, J et al. 2012, 'Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon', Journal of Applied Physics, vol. 111, no. 9, pp. 094910/1-8.

Year

2012

ANU Authors

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Elemental Semiconductors

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