Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

Citation

McCallum, J, Villis, B, Johnson, B et al 2011, 'Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon', Physica Status Solidi A, vol. 208, no. 3, pp. 620-623.

Year

2011

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Elemental Semiconductors

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