Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material

Citation

Linnarsson, M, Janson, M, Zimmermann, U et al 2001, 'Solubility Limit and Precipitate Formation in Al-doped 4H-SiC Epitaxial Material', Applied Physics Letters, vol. 79, no. 13, pp. 2016-2018.

Year

2001

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

Updated:  20 October 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers