Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

Citation

Harding, R, Davies, G, Coleman, P et al. 2003, 'Study of defects in ion-implanted silicon using photoluminescence and positron annihilation', Physica B, vol. 340-342, pp. 738-742.

Year

2003

Fields of Research

  • Soft Condensed Matter
  • Materials Engineering Not Elsewhere Classified
  • Electrical And Electronic Engineering Not Elsewhere Classified

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