Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC

Citation

Wong Leung, Y, Linnarsson, M, Svensson, B et al. 2005, 'Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC', Physical Review B: Condensed Matter and Materials, vol. 71, no. 16, pp. 165210-1-13.

Year

2005

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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