Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Citation

Fatima, S, Wong Leung, Y, Fitzgerald, J et al 1999, 'Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si', Applied Physics Letters, vol. 74, pp. 1141-1143.

Year

1999

Field of Research

  • Structural Geology

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