Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance
Citation
Kuznetsov, A, Wong Leung, Y, Hallen, A et al. 2003, 'Dynamic Annealing in Ion Implanted SiC: Flux versus Temperature Dependance', Journal of Applied Physics, vol. 94, no. 11, pp. 7112-7115.Year
2003Field of Research
- Materials Engineering Not Elsewhere Classified