Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon

Citation

Wong Leung, Y, Fatima, S, Jagadish, C et al 2000, 'Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon', Journal of Applied Physics, vol. 88, pp. 1312-1318.

Year

2000

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

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