Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Citation
Fu, L, Tan, H, McKerracher, I et al. 2006, 'Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors', Journal of Applied Physics, vol. 99, no. 11, pp. 114517-1-8.Year
2006ANU Authors
Fields of Research
- Classical And Physical Optics
- Electrical And Electronic Engineering Not Elsewhere Classified
- Nanotechnology Not Elsewhere Classified
