Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors

Citation

Fu, L, Tan, H, McKerracher, I et al 2006, 'Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors', Journal of Applied Physics, vol. 99, no. 11, pp. 114517-1-8.

Year

2006

Fields of Research

  • Classical And Physical Optics
  • Electrical And Electronic Engineering Not Elsewhere Classified
  • Nanotechnology Not Elsewhere Classified

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