Professor H. Hoe Tan

PhD

Professor

ANU College of Science

E: Hoe.Tan@anu.edu.au

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Areas of expertise

Compound Semiconductors 091203
Condensed Matter Physics 0204
Photonics And Electro Optical Engineering (Excl. Communications) 090606
Nanomaterials 100708
Photonics, Optoelectronics And Optical Communications 020504
Materials Engineering 0912
Electrical And Electronic Engineering 0906
Nanotechnology 1007
Photodetectors, Optical Sensors And Solar Cells 090605
Nanofabrication, Growth And Self Assembly 100706

Publications

Jolley, G, Lu, H, Fu, L et al. 2010, 'Electron-hole recombination properties of In_0.5 Ga_0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage', Applied Physics Letters, vol. 97, no. 12, p. 3.
Neshev, D, Minovich, A, Dieing, T et al. 2010, 'Near-field studies of arrays of chirped subwavelength apertures', Physica Status Solidi: Rapid Research Letters, vol. 4, no. 10, pp. 253-255.
Amaratunga, V, Premaratne, M, Tan, H et al. 2010, 'Performance assessment of hybrid surface emitting lasers with lateral one-dimensional photonic-crystal mirrors', Journal of the Optical Society of America B, vol. 27, no. 4, pp. 806-817.
Liu, D, Hattori, H, Fu, L et al. 2010, 'Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures', Journal of Applied Physics, vol. 107, no. 4, pp. 043105-1 - 043105-8.
Kim, Y, Jung, J, Yoon, H et al. 2010, 'CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method', Nanotechnology, vol. 21, no. 14, pp. 145602-145602.
Kang, J, Gao, Q, Joyce, H et al. 2010, 'Novel growth and properties of GaAs nanowires on Si substrates', Nanotechnology, vol. 21, no. 3, pp. 1-6.
McKerracher, I, Fu, L, Tan, H et al. 2010, 'Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films', Journal of Physics D: Applied Physics, vol. 43, no. 33, p. 8.
Minovich, A, Neshev, D, Powell, D et al. 2010, 'Tilted response of fishnet metamaterials at near-infrared optical wavelengths', Physical Review B: Condensed Matter and Materials, vol. 81, no. 11, p. 6.
Jung, J, Yoon, H, Kim, Y et al. 2010, 'Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers', Nanotechnology, vol. 21, no. 29, pp. 295602-295602.
Joyce, H, Wong Leung, Y, Gao, Q et al. 2010, 'Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters', Nano Letters, vol. 10, no. 3, pp. 908-915.
Paladugu, M, Zou, J, Guo, Y et al. 2009, 'Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures', Journal of Applied Physics, vol. 105, no. 073503, pp. 1-4.
Lei, W, Tan, H & Jagadish, C 2009, 'Formation and shape control of InAsSb/InP (001) nanostructures', Applied Physics Letters, vol. 95, no. 013108, pp. 1-3.
Paladugu, M, Zou, J, Guo, Y et al. 2009, 'Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores', Nanoscale Research Letters, vol. 4, no. 8, pp. 846-849.
Xu, H, Guo, Y, Wang, Y et al. 2009, 'Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si', Journal of Applied Physics, vol. 106, no. 083514, pp. 1-4.
Paiman, S, Gao, Q, Tan, H et al. 2009, 'The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires', Nanotechnology, vol. 20, no. 22, p. 7.
Maharjan, A, Pemasiri, K, Kumar, P et al. 2009, 'Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires', Applied Physics Letters, vol. 94, no. 19, p. 3.
Amaratunga, V, Hattori, H, Premaratne, M et al. 2009, 'Directional Optically Pumped Laterally Coupled DFB Lasers With Circular Mirrors', Journal of Lightwave Technology, vol. 27, no. 11, pp. 1425-1433.
Pemasiri, K, Montazeri, M, Gass, R et al. 2009, 'Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures', Nano Letters, vol. 9, no. 2, pp. 648-654.
Zhang, X, Zou, J, Paladugu, M et al. 2009, 'Evolution of Epitaxial InAs Nanowires on GaAs (111)B', Small, vol. 5, no. 3, pp. 366-369.
Dong, H, Chen, Z, Sun, L et al. 2009, 'Whispering gallery modes in indium oxide hexagonal microcavities', Applied Physics Letters, vol. 94, no. 173115, pp. 1-3.
Dong, H, Chen, Z, Sun, L et al. 2009, 'Nanosheets-Based Rhombohedral In₂O₃ 3D Hierarchical Microspheres: Synthesis, Growth Mechanism, and Optical Properties', Journal of Physical Chemistry C, vol. 113, no. 24, pp. 10511-10516.
Paladugu, M, Zou, J, Guo, Y et al. 2009, 'Formation of Hierarchical InAs Nanoring/GaAs Nanowire Heterostructures', Angewandte Chemie International Edition, vol. 48, no. 4, pp. 780-783.
Jolley, G, Fu, L, Tan, H et al. 2009, 'Properties of In_0.5Ga_0.5As/GaAs/ Al_0.2Ga_0.8 As quantum-dots-in-a-well infrared photodetectors', Journal of Physics D: Applied Physics, vol. 42, no. 9, p. 8.
Jolley, G, Xiao, B, Fu, L et al. 2009, 'Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Journal of Physics D: Applied Physics, vol. 42, no. 11, p. 5.
Liu, D, Hattori, H, Fu, L et al. 2009, 'Single-mode operation of a large optically pumped triangular laser with lateral air trenches', Journal of the Optical Society of America B, vol. 26, no. 7, pp. 1417-1422.
Joyce, H, Gao, Q, Tan, H et al. 2009, 'Unexpected Benefits of Rapid Growth Rate for III-V Nanowires', Nano Letters, vol. 9, no. 2, pp. 695-701.
Liu, D, Hattori, H, Fu, L et al. 2009, 'Coupling Analysis of GaAs-Based Microdisk Lasers With Different External Claddings', Journal of Lightwave Technology, vol. 27, no. 22, pp. 5090-5098.
Reece, P, Paiman, S, Abdul-Nabi, O et al. 2009, 'Combined optical trapping and microphotoluminescence of single InP nanowires', Applied Physics Letters, vol. 95, no. 10, pp. 101109-1 - 101109-3.
Lei, W, Tan, H & Jagadish, C 2009, 'Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures', Applied Physics Letters, vol. 95, no. 14, pp. 143124-143124/3.
Parkinson, P, Joyce, H, Gao, Q et al. 2009, 'Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy', Nano Letters, vol. 9, no. 9, pp. 3349-3353.
Wen, X, Davis, J, Dao, L et al. 2009, 'Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealing', Journal of Luminescence, vol. 129, no. 2, pp. 153-157.
Hall, C, Dao, L, Koike, K et al. 2009, 'Recombination dynamics and screening of the internal electric field in ZnO/Zn_xMg_1-xO multiple quantum wells', Physical Review B: Condensed Matter and Materials, vol. 80, no. 23, p. 6.
Hattori, H, Liu, D, Tan, H et al. 2009, 'Large Square Resonator Laser With Quasi-Single-Mode Operation', IEEE Photonics Technology Letters, vol. 21, no. 6, pp. 359-361.
Minovich, A, Hattori, H, McKerracher, I et al. 2009, 'Enhanced transmission of light through periodic and chirped lattices of nanoholes', Optics Communications, vol. 282, pp. 2023-2027.
Minovich, A, Neshev, D, Powell, D et al. 2009, 'Tilted response of fishnet photonic metamaterials at near-infrared wavelengths', Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology in association with the International Workshop on Dissipative Solitons (ACOLS ACOFT 2009), ed. Australian Optical Society, Australian Optical Society, Australia, p. 2.
Buda, M, Iordache, G, Mokkapati, S et al. 2008, 'Capacitance spectroscopy study of InGaAs/GaAs quantum dot structures', Journal of Optoelectronics and Advanced Materials, vol. 10, no. 2, pp. 323-326.
Mokkapati, S, Tan, H, Jagadish, C et al. 2008, 'Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide lasers', Applied Physics Letters, vol. 92, no. 021104, pp. 1-3.
Paladugu, M, Zou, J, Guo, Y et al. 2008, 'Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures', Applied Physics Letters, vol. 93, no. 101911, pp. 1-3.
Joyce, H, Gao, Q, Tan, H et al. 2008, 'High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization', Advanced Functional Materials, vol. 18, pp. 3794-3800.
Jolley, G, Fu, L, Tan, H et al. 2008, 'Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Applied Physics Letters, vol. 92, no. 19, pp. 1-3.
McKerracher, I, Fu, L, Tan, H et al. 2008, 'Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering', Nanoengineering: Fabrication, Properties, Optics, and Devices 2008, ed. Elizabeth A. Dobisz, Louay A. Eldada, SPIE - The International Society for Optical Engineering, Washington, pp. 70390U/1-10.
Davis, J, Dao, L, Wen, X et al. 2008, 'Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing', Nanotechnology, vol. 19, no. 5, pp. 1-4.
Paladugu, M, Zou, J, Guo, Y et al. 2008, 'Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures', Applied Physics Letters, vol. 93, no. 201908, pp. 1-3.
Hattori, H, Tan, H & Jagadish, C 2008, 'Optically Pumped In-Plane Photonic Crystal Microcavity Laser Arrays Coupled to Waveguides', Journal of Lightwave Technology, vol. 26, no. 11, pp. 1374-1380.
Wen, X, Dao, L, Hannaford, P et al. 2008, 'Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots', European Physical Journal B, vol. 62, pp. 65-70.
McKerracher, I, Hattori, H, Fu, L et al. 2008, 'Photonic crystal-enhanced quantum dot infrared photodetectors', Nanoengineering: Fabrication, Properties, Optics, and Devices 2008, ed. Elizabeth A. Dobisz, Louay A. Eldada, SPIE - The International Society for Optical Engineering, Washington, pp. 70390S/1-11.
Jackson, H, Perera, S, Fickenscher, M et al. 2008, 'Optical properties of single InP and GaAs nanowire heterostructures', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2008), ed. Conference Program Committee, Institute of Electrical and Electronics Engineers (IEEE Inc), UK, pp. 427-428.
Li, Q, Barik, S, Tan, H et al. 2008, 'Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots', Journal of Physics D: Applied Physics, vol. 41, no. 205107, pp. 1-6.
Song, M, Jung, J, Kim, Y et al. 2008, 'Vertically standing Ge nanowires on GaAs(110) substrates', Nanotechnology, vol. 19, no. 125602, pp. 1-6.
Perera, S, Fickenscher, M, Jackson, H et al. 2008, 'Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures', Applied Physics Letters, vol. 93, no. 5, pp. 1-3.
Zubiaga, A, Tuomisto, F, Coleman, V et al. 2008, 'Mechanisms of electrical isolation in O+-irradiated ZnO', Physical Review B: Condensed Matter and Materials, vol. 78, no. 3, pp. 1-5.
Jolley, G, Fu, L, Tan, H et al. 2008, 'Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors', Journal of Physics D: Applied Physics, vol. 41, no. 215101, pp. 1-7.
Fu, L, Li, Q, Kuffner, P et al. 2008, 'Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion', Applied Physics Letters, vol. 93, no. 1, pp. 1-3.
Mokkapati, S, Wong Leung, Y, Tan, H et al. 2008, 'Tuning the bandgap of InAs quantum dots by selective-area MOCVD', Journal of Physics D: Applied Physics, vol. 41, no. 085104, pp. 1-4.
Barik, S, Fu, L, Tan, H et al. 2008, 'Role of Stress on Impurity Free Disordering of Quantum Dots', IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), ed. Lorenzo Faraone, Michael Cortie, John Dell et al, IEEE, Sydney, NSW, pp. 221-224.
Du, S, Fu, L, Tan, H et al. 2008, 'Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells', International Conference on Nanoscience and Nanotechnology (ICONN 2008), ed. Conference Program Committee, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 32-35.
Sears, K, Mokkapati, S, Tan, H et al. 2008, 'In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications', in Zhiming M. Wang (ed.), Self-Assembled Quantum Dots, Springer, New York, pp. 359-403.
Amaratunga, V, Hattori, H, Premaratne, M et al. 2008, 'Photonic crystal phase detectors', Journal of the Optical Society of America B, vol. 25, no. 9, pp. 1532-1536.
Buda, M, Iordache, G, Mokkapati, S et al. 2008, 'Analytical expression for the quantum dot contribution to the quasi static capacitance for conduction band characterization', Journal of Applied Physics, vol. 104, no. 2, pp. 1-11.
Castro-Camus, E, Fu, L, Lloyd-Hughes, J et al. 2008, 'Photoconductive response correction for detectors of terahertz radiation', Journal of Applied Physics, vol. 104, no. 053113, pp. 1-7.
Joyce, H, Gao, Q, Kim, Y et al. 2008, 'Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics', IEEE Conference on Nanotechnology (IEEE-NANO 2008), ed. Kyle Bunch, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 59-62.
Zou, J, Paladugu, M, Guo, Y et al. 2008, 'Growth behavior of epitaxial semiconductor axial nanowire heterostructures', IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), ed. Lorenzo Faraone, Michael Cortie, John Dell et al, IEEE, Sydney, NSW, pp. 71-74.
Hattori, H, McKerracher, I, Tan, H et al. 2007, 'In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides', IEEE Journal of Quantum Electronics, vol. 43, no. 4, pp. 279-286.
Paladugu, M, Zou, J, Guo, Y et al. 2007, 'Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures', Small, vol. 3, no. 11, pp. 1873-1877.
Hoang, T, Titova, L, Yarrison-Rice, J et al. 2007, 'Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires', Nano Letters, vol. 7, no. 3, pp. 588-595.
Barik, S, Fu, L, Tan, H et al. 2007, 'Impurity-free disordering of InAs/InP quantum dots', Applied Physics Letters, vol. 90, pp. 243114 1-3.
Kim, Y, Song, M, Kim, Y et al. 2007, 'Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition', Journal of the Korean Physical Society, vol. 51, no. 1, pp. 120-124.
Zou, J, Paladugu, M, Wang, H et al. 2007, 'Growth Mechanism of Truncated Triangular III-V Nanowires', Small, vol. 3, no. 3, pp. 389-393.
Barik, S, Tan, H & Jagadish, C 2007, 'High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots', Applied Physics Letters, vol. 90, pp. 093106 1-3.
Paladugu, M, Zou, J, Auchterlonie, G et al. 2007, 'Evolution of InAs branches in InAs/GaAs nanowire heterostructures', Applied Physics Letters, vol. 91, no. 13, pp. 133115 1-3.
Parkinson, P, Lloyd-Hughes, J, Gao, Q et al. 2007, 'Transient Terahertz Conductivity of GaAs Nanowires', Nano Letters, vol. 7, no. 7, pp. 2162-2165.
Mokkapati, S, Tan, H & Jagadish, C 2007, 'Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy', Applied Physics Letters, vol. 90, pp. 171104 1-3.
Mishra, A, Titova, L, Hoang, T et al. 2007, 'Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires', Applied Physics Letters, vol. 91, pp. 263104 1-3.
Gareso, P, Buda, M, Fu, L et al. 2007, 'Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures', Semiconductor Science and Technology, vol. 22, pp. 988-992.
Wen, X, Davis, J, Dao, L et al. 2007, 'Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells', Applied Physics Letters, vol. 90, pp. 221914/ 1-3.
Titova, L, Hoang, T, Yarrison-Rice, J et al. 2007, 'Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires', Nano Letters, vol. 7, no. 11, pp. 3383-3387.
Castro-Camus, E, Lloyd-Hughes, J, Fu, L et al. 2007, 'An ion-implanted InP receiver for polarization resolved terahertz spectroscopy', Optics Express, vol. 15, no. 11, pp. 1-11.
Joyce, H, Gao, Q, Tan, H et al. 2007, 'Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process', Nano Letters, vol. 7, no. 4, pp. 921-926.
Matsik, S, Rinzan, M, Perera, A et al. 2007, 'Effects of a p-n junction on heterojunction far infrared detectors', Infrared Physics and Technology, vol. 50, pp. 274-278.
Wen, X, Dao, L, Hannaford, P et al. 2007, 'The state filling effect in p-doped InGaAs/GaAs quantum dots', Journal of Physics: Condensed Matter, vol. 19, pp. 386213/ 1-10.
Wen, X, Davis, J, McDonald, D et al. 2007, 'Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells', Nanotechnology, vol. 18, pp. 315403 1-5.
Barik, S, Tan, H & Jagadish, C 2007, 'Comparison of proton and phosphorous ion implantation-induced intermixing of InAs/InP quantum dots', Nanotechnology, vol. 18, pp. 175305 1-4.
Hattori, H, Tan, H & Jagadish, C 2007, 'Analysis of optically pumped compact laterally coupled distributed feedback lasers with three symmetric defect regions', Journal of Applied Physics, vol. 102, pp. 083109 1-8.
Fu, L, McKerracher, I, Tan, H et al. 2007, 'Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition', Applied Physics Letters, vol. 91, pp. 073515 1-3.
Wen, X, Dao, L, Davis, J et al. 2007, 'Carrier dynamics in p-type InGaAs/GaAs quantum dots', Journal of Materials Science: Materials in Electronics, vol. 18, pp. S363-S365.
Jolley, G, Fu, L, Tan, H et al. 2007, 'Influence of quantum well and barrier composition on the spectral behavior in InGasAs quantum dots-in-a-well infrared photodetectors', Applied Physics Letters, vol. 91, pp. 173508 1-3.
Mokkapati, S, Du, S, Buda, M et al. 2007, 'Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing', Nanoscale Research Letters, vol. 2, pp. 550-553.
Joyce, H, Gao, Q, Kim, Y et al. 2007, 'Growth, structural and optical properties of GaAs, InGaAs and AIGaAs nanowires and nanowire heterostructures', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2007), ed. IEEE, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 407-408.
Lloyd-Hughes, J, Castro-Camus, E, Fraser, M et al. 2006, 'Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation', Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006), ed. Xinbing Liu, Corey Dunsky, Detao Du, et al, Optical Society of America, USA, pp. JTuD18-1-2.
Castro-Camus, E, Lloyd-Hughes, J, Fraser, M et al. 2006, 'Polarization Sensitive Terahertz Time Domain Spectroscopy', Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2006), ed. Xinbing Liu, Corey Dunsky, Detao Du, et al, Optical Society of America, USA, pp. CMS4-1-2.
Barik, S, Tan, H & Jagadish, C 2006, 'Proton Implantation-induced Intermixing of InAs/InP Quantum Dots', Applied Physics Letters, vol. 88, no. 22, pp. 223101-1-3.
Kim, Y, Joyce, H, Gao, Q et al. 2006, 'Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires', Nano Letters, vol. 6, no. 4, pp. 599-604.
Coleman, V, Buda, M, Tan, H et al. 2006, 'Observation of Blue Shifts in ZnO/ZnMgO Multiple Quantum Well Structures by Ion-implantation Induced Intermixing', Semiconductor Science and Technology, vol. 21, pp. L25-L28.
Barik, S, Tan, H & Jagadish, C 2006, 'Comparison of InAs Quantum Dots Grown on GaInAsP and InP', Nanotechnology, vol. 17, pp. 1867-1870.
Sears, K, Wong Leung, Y, Tan, H et al. 2006, 'A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples', Journal of Applied Physics, vol. 99, no. 11, pp. 113503-1-8.
Barik, S, Tan, H, Jagadish, C et al. 2006, 'Selective Wavelength Tuning of Self-assembled InAs Quantum Dots grown on InP', Applied Physics Letters, vol. 88, no. 19, pp. 193112-1-3.
Sears, K, Tan, H, Wong Leung, Y et al. 2006, 'The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition', Journal of Applied Physics, vol. 99, no. 4, pp. 044908-1-5.
Mokkapati, S, Buda, M, Tan, H et al. 2006, 'Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers', Applied Physics Letters, vol. 88, pp. 161121-1-3.
Lloyd-Hughes, J, Merchant , S, Fu, L et al. 2006, 'Influence of Surface Passivation on Ultrafast Carrier Dynamics and Terahertz Radiation Generation in GaAs', Applied Physics Letters, vol. 89, no. 23, pp. 232201-1-3.
Fu, L, McKerracher, I, Tan, H et al. 2006, 'Thermal Annealing Study on InGaAs/GaAs Quantum Dot Infrared Photodetectors', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 493-496.
Paladugu, M, Zou, J, Wang, H et al. 2006, 'Understanding the Kink Formation in GaAs/InAs Heterostructural Nanowires', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 600-603.
Zou, J, Wang, H, Auchterlonie, G et al. 2006, 'Growth Mechanism of Truncated Triangular GaAs Nanowires', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 604-605.
Sears, K, Buda, M, Tan, H et al. 2006, 'Modeling and Characterization of InAs/GaAs Quantum Dot Lasers grown using Metal Organic Chemical Vapor Deposition', Journal of Applied Physics, vol. 101, no. 1, pp. 013112-1-9.
Davis, J, Dao, L, Wen, X et al. 2006, 'Observation of Coherent Biexcitons in ZnO/ZnMgO Multiple Quantum Wells at Room Temperature', Applied Physics Letters, vol. 89, no. 18, pp. 182109-1-3.
Titova, L, Hoang, T, Jackson, H et al. 2006, 'Temperature Dependence of Photoluminescence from Single Core-shell GaAs-AlGaAs Nanowires', Applied Physics Letters, vol. 89, no. 17, pp. 173126-1-3.
Fu, L, Tan, H, McKerracher, I et al. 2006, 'Effects of Rapid Thermal Annealing on Device Characteristics of InGaAs/GaAs Quantum Dot Infrared Photodetectors', Journal of Applied Physics, vol. 99, no. 11, pp. 114517-1-8.
Mokkapati, S, Tan, H, Jagadish, C et al. 2006, 'Integration of Quantum Dot devices by Selective Area Epitaxy', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 442-445.
Tan, H, Sears, K, Mokkapati, S et al. 2006, 'Quantum Dots and Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronic Device Applications', IEEE Journal on Selected Topics in Quantum Electronics, vol. 12, no. 6, pp. 1242-1254.
Guo, Y, Zou, J, Paladugu, M et al. 2006, 'Structural Characteristics of GaSb/GaAs Nanowire Heterostructures grown by Metal-organic Chemical Vapor Deposition', Applied Physics Letters, vol. 89, no. 23, pp. 231917-1-3.
Jolley, G, Fu, L, Tan, H et al. 2006, 'Quantum Dots-in-a-Well Infrared Photodetectors Grown by MOCVD', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 419-422.
Sears, K, Tan, H, Buda, M et al. 2006, 'Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 505-508.
Huang, S, Chen, Z, Bai, L et al. 2006, 'Micro-photoluminescence Confocal Mapping of Single V-grooved GaAs Quantum Wire', Chinese Physics Letters, vol. 23, no. 12, pp. 3341-3344.
Joyce, H, Kim, Y, Gao, Q et al. 2006, 'Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 450-453.
Barik, S, Tan, H & Jagadish, C 2006, 'Growth of Stacked InAs/InP Quantum Dot Structures', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 454-457.
Gao, Q, Buda, M, Tan, H et al. 2006, 'InGaAsN Quantum Dots for Long Wavelength Lasers', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 482-485.
Mokkapati, S, Tan, H & Jagadish, C 2006, 'Integration of an InGaAs Quantum-Dot Laser with a Low-Loss Passive Waveguide using Selective-Area Epitaxy', IEEE Photonics Technology Letters, vol. 18, no. 15, pp. 1648-1650.
Huang, S, Chen, Z, Wang, F et al. 2006, 'Carrier Transfer and Magneto-transport in Single Modulation-doped V-grooved Quantum Wire modified by Ion Implantation', Journal of Luminescence, vol. 119-120, pp. 198-203.
Gareso, P, Buda, M, Petravic, M et al. 2006, 'Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures', Journal of the Electrochemical Society, vol. 153, no. 9, pp. G879-G882.
Gareso, P, Buda, M, Tan, H et al. 2006, 'On Quantifying the Group-V to Group-III Interdiffusion Rates in In_xGa_1-xAs/InP Quantum Wells', Semiconductor Science and Technology, vol. 21, pp. 829-832.
Gareso, P, Buda, M, Fu, L et al. 2006, 'Proton Irradiation-induced Intermixing in In_xGa_1-xAs/InP Quantum Wells - the Effect of In Composition', Semiconductor Science and Technology, vol. 21, pp. 1441-1446.
Gareso, P, Tan, H, Wong Leung, Y et al. 2005, 'Proton Irradiation Induced Intermixing in InxGa1_xAs/InP Quantum Wells', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 93-96.
Mokkapati, S, McGowan, P, Tan, H et al. 2005, 'Selective Area Epitaxy of InGaAs Quantum Dots for Optoelectronic Device Integration', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 273-275.
Gao, Q, Buda, M, Tan, H et al. 2005, 'Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 9-12.
Williams, J, Kucheyev, S, Tan, H et al. 2005, 'Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications', Philosophical Magazine, vol. 85, no. 4-7, pp. 677-687.
Sears, K, Wong Leung, Y, Buda, M et al. 2005, 'Growth and Characterisation of InAs/GaAs Quantum Dots grown by MOCVD', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 1-4.
McGowan, P, Lowrie-Nunes, Z, Buda, M et al. 2005, 'Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 277-279.
Barik, S, Tan, H & Jagadish, C 2005, 'Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP (100) by Metalorganic Chemical Vapor Deposition', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 331-334.
Tan, H, McGowan, P & Jagadish, C 2005, 'Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate', Journal of Crystal Growth, vol. 274, pp. 85-89.
Castro-Camus, E, Lloyd-Hughes, J, Johnston, M et al. 2005, 'Polarization-Sensitive Terahertz Detection by Multicontact Photoconductive Receivers', Applied Physics Letters, vol. 86, no. 25, pp. 254102-1-3.
Sears, K, Wong Leung, Y, Tan, H et al. 2005, 'InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition', Journal of Crystal Growth, vol. 281, pp. 290-296.
Fu, L, McGowan, P, Tan, H et al. 2005, 'Study of Intermixing in InGaAs/(Al)GaAs Quantum Well and Quantum Dot Structures for Optoelectronic/Photonic Integration', IEE Proceedings - Circuits, Devices and Systems, vol. 152, no. 5, pp. 491-496.
Coleman, V, Tan, H, Jagadish, C et al. 2005, 'Thermal Stability of Ion-Implanted ZnO', Applied Physics Letters, vol. 87, no. 23, pp. 231912-1-3.
Gao, Q, Buda, M, Tan, H et al. 2005, 'Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD', Electrochemical and Solid-State Letters, vol. 8, no. 2, pp. G57-G59.
Hoskens, R, van de Roer, T, Smalbrugge, E et al. 2005, 'Hot Electron Injection Laser controlled carrier-heating induced gain switching', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004), ed. Aleksandar D. Rakic and Yew Tong Yeow, Institute of Electrical and Electronics Engineers (IEEE Inc), USA, pp. 397-400.
Mokkapati, S, McGowan, P, Tan, H et al. 2005, 'Controlling the Properties of InGaAs Quantum Dots by Selective-Area Epitaxy', Applied Physics Letters, vol. 86, no. 11, pp. 113102-1-3.
Gao, Q, Fu, L, McGowan, P et al. 2005, 'Quantum Dot Optoelectronic Devices', Microoptics Conference (MOC 2005), ed. Shinji Yamashita, Japan Society of Applied Physics, Japan, pp. J5-1-4.
Coleman, V, Tan, H, Jagadish, C et al. 2005, 'Towards p-type Doping of ZnO by Ion Implantation', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005), ed. Ekaterina Golovchenko, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 847-848.
Fu, L, McGowan, P, Sears, K et al. 2005, 'In_0.5Ga_0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition', IEEE Electron Device Letters, vol. 26, no. 9, pp. 628-630.
Kim, Y, Joyce, H, Gao, Q et al. 2005, 'Growth of GaAs/InAs Vertical Nanowires on GaAs (111)B by Metalorganic Chemical Vapor Deposition', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005), ed. Ekaterina Golovchenko, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 455-456.
Fu, L, Kuffner, P, McKerracher, I et al. 2005, 'Rapid Thermal Annealing Study of InGaAs/GaAs Quantum Dot Infrared Photodetectors grown by Metal-Organic Chemical Vapour Deposition', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005), ed. Ekaterina Golovchenko, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 228-229.
Sears, K, Buda, M, Tan, H et al. 2005, 'The Impact of AlGaAs Cladding Layers Grown at Low Temperature on the Performance of MOCVD based in InAs/GaAs Quantum Dot Laser Diodes', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005), ed. Ekaterina Golovchenko, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 911-912.
Mokkapati, S, Tan, H & Jagadish, C 2005, 'Integration of an InGaAs Quantum-Dot Laser with a Passive Waveguide using Selective-Area MOCVD', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005), ed. Ekaterina Golovchenko, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 915-916.
Sears, K, Mokkapati, S, Buda, M et al. 2005, 'Quantum Dot Lasers and Optoelectronic Device Integration', Annual Meeting of the IEEE Lasers and Electro-optics Society (LEOS 2005), ed. Ekaterina Golovchenko, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway USA, pp. 606-608.
Gao, Q, Tan, H, Jagadish, C et al. 2004, 'Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties', Journal of Crystal Growth, vol. 264, pp. 92-97.
Gao, Q, Tan, H, Jagadish, C et al. 2004, 'Enhanced Optical Properties of the GaAsN/GaAs Quantum-Well Structure by the Insertion of InAs Monolayers', Applied Physics Letters, vol. 84, no. 14, pp. 2536-2538.
Bogaart, E, Haverkort, J, Mano, T et al. 2004, 'Picosecond Time-Resolved Bleaching Dynamics of Self-Assembled Quantum Dots', IEEE Transactions on Nanotechnology, vol. 3, no. 3, pp. 348-352.
Coelho, A, Boudinov, H, Lippen, T et al. 2004, 'Implant Isolation of AlGaAs Multilayer DBR', Nuclear Instruments and Methods in Physics Research: Section B, vol. 218, pp. 381-385.
McGowan, P, Buda, M, Tan, H et al. 2004, 'Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers', IEEE Photonics Technology Letters, vol. 16, no. 12, pp. 2589-2591.
Li, X, Li, N, Demiguel, S et al. 2004, 'A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions', IEEE Photonics Technology Letters, vol. 16, no. 10, pp. 2326-2328.
Reece, P, Gal, M, Tan, H et al. 2004, 'Optical properties of erbium-implanted porous silicon microcavities', Applied Physics Letters, vol. 85, no. 16, pp. 3363-3365.
McGowan, P, Buda, M, Tan, H et al. 2004, 'Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots', IEEE Journal of Quantum Electronics, vol. 40, no. 10, pp. 1410-1416.
McGowan, P, Tan, H & Jagadish, C 2004, 'Impurity Free Vacancy Disordering of InGaAs Quantum Dots', Journal of Applied Physics, vol. 96, no. 12, pp. 7544-7548.
Gareso, P, Buda, M, Fu, L et al. 2004, 'Supression of Thermal Atomic Interdiffusion in C-doped InGaAs/AIGaAs Quantum Well Laser Structures using TiO2 Dielectric Layers', Applied Physics Letters, vol. 85, no. 23, pp. 5583-5585.
Deenapanray, P, Krispin, M, Meyer, W et al. 2004, 'Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs', Materials Research Society Meeting 2003, ed. Daniel J Friedman, Omar Manasreh, Irina A. Buyanova, Anneli Munkholm, F. Danie A, Materials Research Society, Warrendale, PA, USA, p. 1.
McGowan, P, Tan, H & Jagadish, C 2004, 'InGaAs Quantum Dots Grown with GaP Strain Compensation Layers', Journal of Applied Physics, vol. 95, no. 10, pp. 5710-5714.
Carmody, C, Tan, H, Jagadish, C et al. 2004, 'Structural, Electrical, and Optical Analysis of Ion Implanted Semi-insulating InP', Journal of Applied Physics, vol. 95, no. 2, pp. 477-482.
Gao, Q, Tan, H, Fu, L et al. 2004, 'Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots', Applied Physics Letters, vol. 84, no. 24, pp. 4950-4952.
Carmody, C, Tan, H, Jagadish, C et al. 2003, 'Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications', Applied Physics Letters, vol. 82, no. 22, pp. 3913-3915.
Buda, M, Tan, H, Fu, L et al. 2003, 'Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge', IEEE Photonics Technology Letters, vol. 15, no. 12, pp. 1686-1688.
Gao, Q, Deenapanray, P, Tan, H et al. 2003, 'Implantation-induced Electrical Isolation of GaAsN Epilayers Grown by Metalorganic Chemical Vapor Deposition', Applied Physics Letters, vol. 83, no. 16, pp. 3386-3388.
Coleman, V, Deenapanray, P, Tan, H et al. 2003, 'Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 495-498.
Carmody, C, Tan, H, Jagadish, C et al. 2003, 'Structural, Electrical and Optical Properties of MEV As⁺ Ion Implanted InP', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 487-490.
Buda, M, Tan, H, Fu, L et al. 2003, 'Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 25-28.
Sun, B, Gal, M, Gao, Q et al. 2003, 'Properties of Radiative Recombination in GaAsN Epilayers', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 483-486.
Williams, J, Elliman, R, Tan, H et al. 2003, 'Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications', National Conference and Exhibition on Nanotechnology 2003, ed. R Wuhrer, Institute of Materials Engineering Australasia, Melbourne, pp. 74-80.
Gao, Q, Tan, H, Jagadish, C et al. 2003, 'Growth and Characterization of GaAsN Bulk Layer and (InGaAsN Quantum-well Structures', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 247-250.
McGowan, P, Tan, H, Reece, P et al. 2003, 'Interdiffusion in InGaAs Quantum Dots by Ion Implantation', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 515-518.
Fu, L, McGowan, P, Tan, H et al. 2003, 'Suppression of Interdiffusion in In_0.5Ga_0.5As/GaAs Quantum Dots', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 503-506.
Carmody, C, Tan, H & Jagadish, C 2003, 'Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 491-494.
McGowan, P, Tan, H & Jagadish, C 2003, 'Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 307-310.
Gao, Q, Tan, H, Jagadish, C et al. 2003, 'Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition', Japanese Journal of Applied Physics, vol. 42, pp. 6827-6832.
Sun, B, Gal, M, Gao, Q et al. 2003, 'Epitaxially Grown GaAsN Random Laser', Journal of Applied Physics, vol. 93, no. 10, pp. 5855-5858.
Buda, M, Hay, J, Tan, H et al. 2003, 'Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures', Journal of the Electrochemical Society, vol. 150, no. 8, pp. G481-G487.
Carmody, C, Tan, H & Jagadish, C 2003, 'Electrical Isolation of n- and p-In_0.53Ga_0.47As Epilayers using Ion Irradiation', Journal of Applied Physics, vol. 94, no. 10, pp. 6616-6620.
Buda, M, Hay, J, Tan, H et al. 2003, 'Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design', IEEE Journal of Quantum Electronics, vol. 39, no. 5, pp. 625-633.
Li, Z, Lu, W, Liu, Q et al. 2003, 'Determination of Carrier-transfer Length from Side-wall Quantum Well to Quantum Wire by Micro-photoluminescence Scanning', Journal of Electronic Materials, vol. 32, no. 8, pp. 913-916.
Fu, L, McGowan, P, Tan, H et al. 2003, 'Suppression of Interdiffusion in InGaAs/GaAs Quantum Dots using Dielectric Layer of Titanium Dioxide', Applied Physics Letters, vol. 82, no. 16, pp. 2613-2615.
Deenapanray, P, Svensson, B, Tan, H et al. 2003, 'A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers', Japanese Journal of Applied Physics, vol. 42, no. 3, pp. 1158-1163.
Boudinov, H, Coelho, A, Tan, H et al. 2003, 'Characterization of Deep Level Traps Responsible for Isolation of Proton Implanted GaAs', Journal of Applied Physics, vol. 93, no. 6, pp. 3234-3238.
Deenapanray, P, Tan, H & Jagadish, C 2003, 'Electrical Characterization of Impurity-free Disordering-induced Defects in n-GaAs using Native Oxide Layers', Applied Physics A: Materials Science and Processing, vol. 76, pp. 961-964.
Carmody, C, Tan, H & Jagadish, C 2003, 'Influence of Cap Layer on Implantation Induced Interdiffusion in InP/InGaAs Quantum Wells', Journal of Applied Physics, vol. 93, no. 8, pp. 4468-4470.
Doshi, S, Deenapanray, P, Tan, H et al. 2003, 'Towards a Better Understanding of the Operative Mechanisms Underlying Impurity-free Disordering of GaAs: Effect of Stress', Journal of Vacuum Science and Technology B, vol. 21, no. 1, pp. 198-203.
Carmody, C, Tan, H, Jagadish, C et al. 2003, 'Ultrafast carrier trapping and recombination in highly resistive ion implanted InP', Journal of Applied Physics, vol. 94, no. 2, pp. 1074-1078.
McGowan, P, Tan, H, Jagadish, C et al. 2003, 'Proton-Irradiation-Induced Intermixing in InGaAs Quantum Dots', Applied Physics Letters, vol. 82, pp. 2053-2055.
Fu, L, Wong Leung, Y, Deenapanray, P et al. 2002, 'Suppression of Interdiffusion in GaAs/AlGaAs Quantum-Well Structure Capped with Dielectric Films by Deposition of Gallium Oxide', Journal of Applied Physics, vol. 92, no. 7, pp. 3579-3583.
Deenapanray, P, Gong, B, Lamb, R et al. 2002, 'Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 23, pp. 4351-4353.
Lippen, T, Boudinov, H, Tan, H et al. 2002, 'Electrical Isolation of Al_xGa_1-xAs by Ion Irradiation', Applied Physics Letters, vol. 80, pp. 264-266.
Deenapanray, P, Martin, A, Doshi, S et al. 2002, 'Atomic Relocation Processes in Impurity-Free Disordered p-GaAs Epilayers Studied by Deep Level Transient Spectroscopy', Applied Physics Letters, vol. 81, no. 19, pp. 3573-3575.
Sun, B, Gal, M, Gao, Q et al. 2002, 'On the Nature of Radiative Recombination in GaAsN', Applied Physics Letters, vol. 81, no. 23, pp. 4368-4370.
Gal, M, Dao, L, Kraft, E et al. 2002, 'Thermally Stimulated Luminescence in Ion-Implanted GaAs', Journal of Luminescence, vol. 96, pp. 287-293.
Lederer, M, Hildebrandt, M, Kolev, V et al. 2002, 'Passive Mode Locking of a Self-frequency-doubling Yb:Yal₃ (BO₃)₄ Laser', Optics Letters, vol. 27, no. 6, pp. 436-438.
Buda, M, Fu, L, Hay, J et al. 2002, 'Impurity Free Intermixing for Optoelectronic Device Integration', Integrated Optoelectronics, ed. M J Deen, D Misra, J Ruzyllo, Electrochemical Society Inc, Pennington, NJ, pp. 89-105.
Carmody, C, Boudinov, H, Tan, H et al. 2002, 'Ultrafast Trapping Times in Ion Implanted InP', Journal of Applied Physics, vol. 92, no. 5, pp. 2420-2423.
Fu, L, Heijden, R, Tan, H et al. 2002, 'Study of Intermixing in a GaAs/AlGaAs Quantum-well Structure using Dope Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 7, pp. 1171-1173.
Deenapanray, P, Lay, M, Aberg, D et al. 2001, 'Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition', Physica B, vol. 308-310, pp. 776-779.
Liu, Q, Sasaki, A, Ohno, N et al. 2001, 'Evidence of Blocking Effect on Carrier Trapping Process by Necking Region in a Very Narrow AIGaAs/GaAs V-grooved Quantum Wire Structure', Journal of Applied Physics, vol. 90, no. 10, pp. 5438-5440.
Giniunas, L, Danielius, R, Tan, H et al. 2001, 'Electron and trap dynamics in As-ion-implanted and annealed GaAs', Applied Physics Letters, vol. 78, no. 12, pp. 1667-1669.
Lu, W, Liu, Q, Li, Z et al. 2001, 'Carrier transfer between V-grooved quantum wire and vertical quantum well', Physics Letters A, vol. 280, pp. 77-80.
Fu, L, Tan, H, Jagadish, C et al. 2001, 'Tuning the detection wavelength of quantum-well infrared photodetectors by single-high energy implantation', Applied Physics Letters, vol. 78, no. 1, pp. 10-12.
Fu, Y, Willander, M, Liu, Q et al. 2001, 'Optical transition in infrared photodetector based on V-groove Al_0.5Ga_0.5As/GaAs multiple quantum wire', Journal of Applied Physics, vol. 89, no. 4, pp. 2351-2356.
Li, N, Fu, L, Li, N et al. 2001, 'The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors', Journal of Crystal Growth, vol. 222, pp. 786-790.
Boudinov, H, Tan, H & Jagadish, C 2001, 'Electrical isolation of n-type and p-type InP layers by proton bombardment', Journal of Applied Physics, vol. 89, no. 10, pp. 5343-5347.
Dao, L, Gal, M, Fu, L et al. 2001, 'Possibility of improved frequency response from intermixed quantum-well devices', Superlattices and Microstructures, vol. 29, no. 2, pp. 105-110.
Fu, L, Tan, H, Jagadish, C et al. 2001, 'Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing', Infrared Physics and Technology, vol. 42, pp. 171-175.
Gal, M, Wengler, M, Ilyas, S et al. 2001, 'Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler', Nuclear Instruments and Methods in Physics Research: Section B, vol. 173, pp. 528-532.
Liu, X, Lu, W, Shen, S et al. 2001, 'Application of Selective Implantation in AIGaAs/InGaAs/GaAs Pseudomorphic Single Quantum Wire Structures', Nanotechnology, vol. 1, pp. 389-392.
Lederer, M, Kolev, V, Luther-Davies, B et al. 2001, 'Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking', Journal of Physics D: Applied Physics, vol. 34, no. 16, pp. 2455-2464.
Dao, L, Gal, M, Carmody, C et al. 2000, 'A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells', Journal of Applied Physics, vol. 88, pp. 5252-5254.
Liu, Q, Li, N, Li, Z et al. 2000, 'Investigation of AlGaAs/GaAs V-grooved Quantum Wire Infrared', Japanese Journal of Applied Physics, vol. 39, pp. 5124-5127.
Liu, Q, Li, Z, Chen, X et al. 2000, 'Arsenic implantation-induced intermixing effects on AlGaAs/GaAs single QW structures', Physics Letters A, vol. 271, pp. 213-216.
Liu, Q, Lu, W, Chen, X et al. 2000, 'Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing', Journal of Applied Physics, vol. 87, pp. 1566-1568.
Marcinkevicius, S, Jagadish, C, Tan, H et al. 2000, 'Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers', Applied Physics Letters, vol. 76, pp. 1306-1308.
Kuball, M, Hayes, J, Suski, T et al. 2000, 'High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering', Journal of Applied Physics, vol. 87, pp. 2736-2741.
Liu, Q, Li, N, Lu, W et al. 2000, 'Wavelength tuning of GaAs/AlGaAs quantum well infrared photo detectors by proton implantation induced intermixing', Japanese Journal of Applied Physics, vol. 39, pp. 1687-1689.
Hegeler, F, Manasreh, M, Morath, C et al. 2000, 'Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells', Applied Physics Letters, vol. 77, pp. 2867-2869.
Fu, L, Deenapanray, P, Tan, H et al. 2000, 'Quality of Silica Capping Layer and its Influence on Quantum-Well Intermixing', Applied Physics Letters, vol. 76, pp. 837-839.
Deenapanray, P, Tan, H & Jagadish, C 2000, 'Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells', Materials Research Society Symposium Proceedings, vol. 607, pp. 491-502.
Deenapanray, P, Tan, H, Jagadish, C et al. 2000, 'Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers', Journal of Applied Physics, vol. 88, pp. 5255-5261.
Deenapanray, P, Tan, H, Jagadish, C et al. 2000, 'Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition', Applied Physics Letters, vol. 77, pp. 696-698.
Deenapanray, P, Tan, H, Cohen, M et al. 2000, 'Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells', Journal of the Electrochemical Society, vol. 147, pp. 1950-1956.
Deenapanray, P, Tan, H, Fu, L et al. 2000, 'Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing', Electrochemical and Solid-State Letters, vol. 3, pp. 196-199.
Zhao, Q, Willander, M, Lu, W et al. 2000, 'Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires', Journal of Applied Physics, vol. 88, pp. 2519-2522.
Liu, Q, Lu, W, Li, Z et al. 1999, 'Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing', Applied Physics Letters, vol. 75, pp. 3339-3341.
Tan, H, Jagadish, C, Lederer, M et al. 1999, 'Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers', Applied Physics Letters, vol. 75, no. 10, pp. 1437-1439.
Lederer, M, Luther-Davies, B, Tan, H et al. 1999, 'Multipulse Operation of a Ti:sapphire Laser Mode locked by an Ion-Implanted Semiconductor Saturable-Absorber Mirror', Journal of the Optical Society of America B, vol. 16, no. 6, pp. 895-904.
Lederer, M, Luther-Davies, B, Tan, H et al. 1999, 'Nonlinear Optical Absorption and Temporal Response of Arsenic-and Oxygen-Implantated GaAs', Applied Physics Letters, vol. 74, no. 14, pp. 1993-1995.
Cohen, M, Tan, H & Jagadish, C 1999, 'Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators', Journal of Applied Physics, vol. 85, pp. 7964-7966.
Johnston, M, Gal, M, Chen, Z et al. 1999, 'Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays', Applied Physics Letters, vol. 75, pp. 923-925.
Karouta, F, Tan, H, Jagadish, C et al. 1999, 'Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers', Electronics Letters, vol. 35, pp. 815-817.
Fu, L, Tan, H, Johnston, M et al. 1999, 'Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers', Journal of Applied Physics, vol. 85, pp. 6786-6789.
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