Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells

Citation

Deenapanray, P, Tan, H, Cohen, M et al 2000, 'Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells', Journal of the Electrochemical Society, vol. 147, pp. 1950-1956.

Year

2000

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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