Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells
Citation
Deenapanray, P, Tan, H, Cohen, M et al. 2000, 'Silane flow rate dependence of SiOx cap layer induced impurity free interdiffusion of GaAs/AlGaAs quantum wells', Journal of the Electrochemical Society, vol. 147, pp. 1950-1956.Year
2000ANU Authors
Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified