Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures

Citation

Gareso, P, Buda, M, Fu, L et al 2007, 'Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures', Semiconductor Science and Technology, vol. 22, pp. 988-992.

Year

2007

Field of Research

  • Nanotechnology Not Elsewhere Classified

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