Properties of Radiative Recombination in GaAsN Epilayers

Citation

Sun, B, Gal, M, Gao, Q et al 2003, 'Properties of Radiative Recombination in GaAsN Epilayers', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2002), ed. Michael Gal, Institute of Electrical and Electronics Engineers (IEEE Inc), Piscataway, NJ, pp. 483-486.

Year

2003

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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