Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors

Citation

Jolley, G, Fu, L, Tan, H et al 2009, 'Properties of In0.5Ga0.5As/GaAs/ Al0.2Ga0.8 As quantum-dots-in-a-well infrared photodetectors', Journal of Physics D: Applied Physics, vol. 42, no. 9, p. 8.

Year

2009

Field of Research

  • Condensed Matter Physics Not Elsewhere Classified

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