Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers

Citation

Deenapanray, P, Tan, H, Jagadish, C et al 2000, 'Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers', Journal of Applied Physics, vol. 88, pp. 5255-5261.

Year

2000

Field of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges

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