Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells

Citation

Deenapanray, P, Tan, H & Jagadish, C 2000, 'Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells', Materials Research Society Symposium Proceedings, vol. 607, pp. 491-502.

Year

2000

Field of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges

Updated:  31 October 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers