A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples

Citation

Sears, K, Wong Leung, Y, Tan, H et al 2006, 'A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples', Journal of Applied Physics, vol. 99, no. 11, pp. 113503-1-8.

Year

2006

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Nanotechnology Not Elsewhere Classified

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