A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples
Citation
Sears, K, Wong Leung, Y, Tan, H et al. 2006, 'A Transmission Electron Microscopy Study of Defects formed through the Capping Layer of Self-assembled InAs/GaAs Quantum Dot Samples', Journal of Applied Physics, vol. 99, no. 11, pp. 113503-1-8.
Year
2006
Fields of Research
- Surfaces And Structural Properties Of Condensed Matter
- Nanotechnology Not Elsewhere Classified
