A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells

Citation

Dao, L, Gal, M, Carmody, C et al 2000, 'A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells', Journal of Applied Physics, vol. 88, pp. 5252-5254.

Year

2000

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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