Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Citation

Fu, L, McKerracher, I, Tan, H et al 2007, 'Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition', Applied Physics Letters, vol. 91, pp. 073515 1-3.

Year

2007

Field of Research

  • Nanotechnology Not Elsewhere Classified

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