Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers

Citation

Deenapanray, P, Gong, B, Lamb, R et al 2002, 'Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-on Silica Layers', Applied Physics Letters, vol. 80, no. 23, pp. 4351-4353.

Year

2002

Fields of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified
  • Classical And Physical Optics

Updated:  23 January 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers