Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Citation

Xu, H, Guo, Y, Wang, Y et al. 2009, 'Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si', Journal of Applied Physics, vol. 106, no. 083514, pp. 1-4.

Year

2009

ANU Authors

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

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