Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Citation

Jolley, G, Xiao, B, Fu, L et al. 2009, 'Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors', Journal of Physics D: Applied Physics, vol. 42, no. 11, p. 5.

Year

2009

ANU Authors

Field of Research

  • Condensed Matter Physics Not Elsewhere Classified

Updated:  17 April 2024 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers