Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition

Citation

Deenapanray, P, Tan, H, Jagadish, C et al. 2000, 'Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition', Applied Physics Letters, vol. 77, pp. 696-698.

Year

2000

ANU Authors

Field of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges

Updated:  21 September 2024 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers