Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition

Citation

Deenapanray, P, Lay, M, Aberg, D et al 2001, 'Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition', Physica B, vol. 308-310, pp. 776-779.

Year

2001

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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