Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing
Citation
Deenapanray, P, Tan, H, Fu, L et al. 2000, 'Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing', Electrochemical and Solid-State Letters, vol. 3, pp. 196-199.Year
2000Fields of Research
- Classical And Physical Optics
- Materials Engineering Not Elsewhere Classified
