Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing

Citation

Deenapanray, P, Tan, H, Fu, L et al 2000, 'Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing', Electrochemical and Solid-State Letters, vol. 3, pp. 196-199.

Year

2000

Fields of Research

  • Classical And Physical Optics
  • Materials Engineering Not Elsewhere Classified

Updated:  15 August 2020 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers