A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers

Citation

Deenapanray, P, Svensson, B, Tan, H et al 2003, 'A Comparison of Low-energy As Ion Implantation and Impurity-free Disordering Induced Defects in N-type GaAs Epitaxial Layers', Japanese Journal of Applied Physics, vol. 42, no. 3, pp. 1158-1163.

Year

2003

Field of Research

  • Metals And Alloy Materials

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