Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC

Citation

Slotte, J, Saarinen, K, Janson, M et al 2005, 'Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC', Journal of Applied Physics, vol. 97, no. 3, pp. 033513-1-7.

Year

2005

Field of Research

  • Soft Condensed Matter

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