Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC

Citation

Slotte, J, Saarinen, K, Janson, M et al. 2005, 'Fluence, Flux and Implantation Temperature Dependence of Ion-Implantation-Induced Defect Production in 4H-SiC', Journal of Applied Physics, vol. 97, no. 3, pp. 033513-1-7.

Year

2005

ANU Authors

Field of Research

  • Soft Condensed Matter

Updated:  20 April 2024 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers