Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing

Citation

Gao, Q, Saxena, D, Wang, F et al 2014, 'Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing', Nano Letters, vol. 14, no. 9, pp. 5206-5211.

Year

2014

Field of Research

  • Compound Semiconductors

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