Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

Citation

Pellegrino, P, Leveque, P, Kortegaard-Nielsen, H et al. 2002, 'Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 186, pp. 334-338.

Year

2002

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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