Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation

Citation

Monakhov, E, Wong Leung, Y, Kuznetsov, A et al 2002, 'Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation', Physical Review B, vol. 65, pp. 245201-1-9.

Year

2002

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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