Effect of implant temperature on extended defects created by ion implantation in silicon

Citation

Wong Leung, Y, Fatima, S, Jagadish, C et al 2000, 'Effect of implant temperature on extended defects created by ion implantation in silicon', Defects and Diffusion Forum Part A: Defect and Diffusion Forum, vol. 183, no. 1, pp. 163-169.

Year

2000

Field of Research

  • Metals And Alloy Materials

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