Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation
Citation
Pellegrino, P, Leveque, P, Wong Leung, Y et al. 2001, 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation', Applied Physics Letters, vol. 78, no. 22, pp. 3442-3444.Year
2001Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified
