Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation

Citation

Pellegrino, P, Leveque, P, Wong Leung, Y et al. 2001, 'Separation of vacancy and interstitial depth profiles in ion-implanted silicon: experimental observation', Applied Physics Letters, vol. 78, no. 22, pp. 3442-3444.

Year

2001

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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