Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Citation
MacDonald, D, Cuevas, A & Wong Leung, Y 2001, 'Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements', Journal of Applied Physics, vol. 89, no. 12, pp. 7932-7939.Year
2001ANU Authors
Field of Research
- Electrical And Electronic Engineering Not Elsewhere Classified
