Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements

Citation

MacDonald, D, Cuevas, A & Wong Leung, Y 2001, 'Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements', Journal of Applied Physics, vol. 89, no. 12, pp. 7932-7939.

Year

2001

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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