Professor Jim Williams
Areas of expertise
- Photonics, Optoelectronics And Optical Communications 020504
- Electronic And Magnetic Properties Of Condensed Matter; Superconductivity 020404
- Elemental Semiconductors 091204
- Surfaces And Structural Properties Of Condensed Matter 020406
- Condensed Matter Physics 0204
- Electrical And Electronic Engineering 0906
- Nanotechnology 1007
- Materials Engineering 0912
- Other Physical Sciences 0299
Biography
Professor Williams obtained his BSc (1969) and PhD (1973) from the University of New South Wales before moving to Europe and North America for a series of research appointments, including a member of technical staff at Bell Telephone Laboratories, New Jersey, USA. He returned to an academic post at the Royal Melbourne Institute of Technology in 1978 where he became Director of the Microelectronics and Materials Technology Centre in 1982. In 1988 he moved to the Research School of Physical Sciences at ANU as Foundation Professor of the Department of Electronic Materials Engineering. In 1997 he assumed the role of Associate Director of the Research School of Physics & Engineering at ANU and took up the Directorship of the School in 2002. He retired from this position in 2012 and is now an Emeritus Professor at ANU.
His research has been in the diverse areas of materials science, nanotechnology, ion-solid interactions, semiconductor processing and high pressure research for nearly 50 years. He has published over 500 refereed papers and five books within these fields, with over 12,000 citations and a H index of 59. He is best known internationally for his pioneering work on ion implantation into semiconductors, solid phase epitaxial growth, development of ion beam analysis methods, impurity gettering and nanoindentation of semiconductors, the latter area leading to prospects for novel patterning of silicon at room temperature. He has served on the editorial board of ten international journals and three international conference series. He was awarded the Boas Medal of the Australian Institute of Physics (1993) and the Thomas Rankin Lyle Medal of the Australian Academy of Science (2011). He is a Fellow of the Australian Academy of Science, the Australian Academy of Technological Sciences and Engineering, the Materials Research Society, and the American Physical Society. Until recently he was Vice President and Secretary for Physical Sciences at the Australian Academy of Science, and is a past Chair of this Academy’s National Committee for Materials Science and Engineering. He has been a Vice President of the International Union of Materials Research Societies, is currently Secretary of this International Union and is a Past President of the Australian Materials Research Society. He has been the founding director or initiator of two spin off companies, Acton Semiconductors and WRiota, in 1999 and 2004, respectively.
Publications
- Huston, L, Lugstein, A, Shen, G et al. 2021, 'Synthesis of Novel Phases in Si Nanowires Using Diamond Anvil Cells at High Pressures and Temperatures', Nano Letters, vol. 21, no. 3, pp. 1427-1433.
- Smillie, L, Niihori, M, Rapp, L et al. 2020, 'Exotic silicon phases synthesized through ultrashort laser-induced microexplosion: Characterization with Raman microspectroscopy', Physical Review Materials, vol. 4, no. 9, pp. 1-8.
- Warrender, J, Chow, P, Lim, S et al. 2020, 'Novel group IV materials for infrared sensing through pulsed laser melting', 3rd IEEE Research and Applications of Photonics In Defense Conference, RAPID 2018, ed. Peer reviewed, IEEE, United States, pp. 1-2.
- Gandhi, H, Pastor, D, Tran, T et al. 2020, 'Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection', AIP Advances, vol. 10, no. 7, pp. -.
- Tran, T, Hudspeth, Q, Liu, Y et al. 2020, 'Ion beam synthesis and photoluminescence study of supersaturated fully-relaxed Ge-Sn alloys', Materials Science and Engineering B, vol. 262, no. 114702.
- Lim, S, Lew, C, Chow, P et al. 2020, 'Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors', APL Materials, vol. 8, no. 6, pp. 1-5.
- Wong, S, Haberl, B, Johnson, B et al. 2019, 'Formation of an r8-Dominant Si Material', Physical Review Letters, vol. 122, no. 10, pp. 1-6.
- Yang, W, Ferdous, N, Simpson, P et al. 2019, 'Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting', APL Materials, vol. 7, no. 10, pp. -.
- Yang, W, Hudspeth, Q, Chow, P et al. 2019, 'Atomistic Mechanisms for the Thermal Relaxation of Au -hyperdoped Si', Physical Review Applied, vol. 12, no. 2.
- Tran, P, Mathews, J & Williams, J 2019, 'Towards a direct band gap group IV Ge-based material', Materials Science in Semiconductor Processing, vol. 92, pp. 39-46.
- Wong, S, Johnson, B, Haberl, B et al. 2019, 'Thermal evolution of the indentation-induced phases of silicon', Journal of Applied Physics, vol. 126, no. 10, pp. 1-9.
- Mathews, J, Tran, T, Liu, Y et al. 2019, 'MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting', 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019, IEEE, United States, pp. 1-2.
- Dissanayake, S, Chow, P, Lim, S et al. 2018, 'Evaluating carrier lifetimes in laser hyperdoped silicon using terahertz spectroscopy', CLEO: Applications and Technology, CLEO_AT 2018, The Optical Society, TBC, pp. -.
- Huston, L, Lugstein, A, Williams, J et al. 2018, 'The high pressure phase transformation behavior of silicon nanowires', Applied Physics Letters, vol. 113, no. 12, pp. 5pp.
- Chow, P, Yang, W, Hudspeth, Q et al. 2018, 'Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films', Journal of Applied Physics, vol. 123, no. 13, pp. 1-8pp.
- Alkhaldi, H, Kremer, F, Bierschenk, T et al. 2017, 'Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys (vol 119, 094303, 2016)', Journal of Applied Physics, vol. 121, no. 4, pp. 2pp.
- Yang, W, Akey, A, Smillie, L et al. 2017, 'Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si', Physical Review Materials, vol. 1, no. 7, pp. 10pp.
- Liu, Y, Yang, W, Hudspeth, Q et al. 2017, 'Hyperdoped silicon characterization and photodetectors', Frontiers in Optics, FiO 2017, Optical Society of American (OSA), United States, pp. -.
- Tran, P, Gandhi, H, Pastor, D et al. 2017, 'Ion-beam synthesis and thermal stability of highly tin-concentrated germanium - tin alloys', Materials Science in Semiconductor Processing, vol. 62, pp. 192-195.
- Huston, L, Mangalampalli, S, Smillie, L et al. 2017, 'Cold nanoindentation of germanium', Applied Physics Letters, vol. 111, no. 2, pp. 021901 (1-4 pp).
- Alkhaldi, H, Kluth, P, Kremer, F et al. 2017, 'Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloys', Journal of Physics D: Applied Physics, vol. 50, no. 12, pp. 125101-125108.
- Huston, L, Johnson, B, Haberl, B et al. 2017, 'Thermal stability of simple tetragonal and hexagonal diamond germanium', Journal of Applied Physics, vol. 122, no. 17, pp. 1-7pp.
- Warrender, J, Mathews, J, Hudspeth, Q et al. 2017, 'Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants', 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, IEEE, TBC, pp. 127-128.
- Williams, J & Tran, P 2017, 'Synthesis of Ge-Sn alloys by ion implantation and pulsed laser melting: Towards a group IV direct band gap semiconductor', 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, IEEE, TBC, pp. 1-2.
- Wong, S, Haberl, B, Williams, J et al. 2017, 'Phase Transformation Dependence on Initial Plastic Deformation Mode in Si via Nanoindentation', Experimental Mechanics, vol. 57, no. 7, pp. 1037-1043.
- Yang, W, Williams, J & Mathews, J 2016, 'Hyperdoping of Si by ion implantation and pulsed laser melting', Materials Science in Semiconductor Processing, vol. In Press, pp. -.
- Alkhaldi, H, Tran, T, Kremer, F et al. 2016, 'The influence of capping layers on pore formation in Ge during ion implantation', Journal of Applied Physics, vol. 120, no. 21, pp. 1-10.
- Tran, P, Alkhaldi, H, Gandhi, H et al. 2016, 'Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer', Applied Physics Letters, vol. 109, no. 8, pp. -.
- Williams, J 2016, 'Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures', in Werner Wesch & Elke Wendler (ed.), Ion Beam Modification of Solids, Springer International Publishing Switzerland, Switzerland, pp. 243-285.
- Holmström, E, Haberl, B, Pakarinen, O et al. 2016, 'Dependence of short and intermediate-range order on preparation in experimental and modeled pure a-Si', Journal of Non-crystalline Solids, vol. 438, pp. 26-36.
- Tran, P, Pastor, D, Gandhi, H et al. 2016, 'Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material', Journal of Applied Physics, vol. 119, no. 18, p. 183102.
- Alkhaldi, H, Kremer, F, Bierschenk, T et al. 2016, 'Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys', Journal of Applied Physics, vol. 119, no. 9.
- Mangalampalli, S, Haberl, B, Bradby, J et al. 2015, 'Nanoindentation of Silicon and Germanium', in Lucia Romano, Vittorio Privitera, Chennupati Jagadish (ed.), Semiconductors and Semimetals: Defects in Semiconductors, Elsevier Inc., Burlington, pp. 165-203.
- Wong, S, Haberl, B, Williams, J et al. 2015, 'The influence of hold time on the onset of plastic deformation in silicon', Journal of Applied Physics, vol. 118, no. 24, pp. -.
- Haberl, B, Guthrie, M, Sinogeikin, S et al. 2015, 'Thermal evolution of the metastable r8 and bc8 polymorphsofsilicon', High Pressure Research, vol. 35, no. 2, pp. 99-116.
- Verburg, P, Smillie, L, Romer, G et al. 2015, 'Crystal structure of laser-induced subsurface modifications in Si', Applied Physics A: Materials Science and Processing, vol. 120, no. 2, pp. 683-691.
- Elliman, R & Williams, J 2015, 'Advances in ion beam modification of semiconductors', Current Opinion in Solid State and Materials Science, vol. 19, no. 1, pp. 49-67.
- Mangalampalli, S, Tran, T, Smillie, L et al. 2015, 'Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation', Journal of Applied Physics, vol. 117, no. 20, pp. 1-9.
- Akey, A, Recht, D, Williams, J et al. 2015, 'Single-Phase Filamentary Cellular Breakdown Via Laser-Induced Solute Segregation', Advanced Functional Materials, vol. 25, no. 29, pp. 4642-4649.
- Rapp, L, Haberl, B, Pickard, C et al. 2015, 'Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion', Nature Communications, vol. 6, no. 7555, p. 10.
- Wong, S, Haberl, B, Williams, J et al. 2015, 'Phase transformation as the single-mode mechanical deformation of silicon', Applied Physics Letters, vol. 106, no. 25, pp. 1-4.
- Rapp, L, Haberl, B, Bradby, J et al. 2014, 'Ultrafast Laser Induced Confined Microexplosion: A New Route to Form Super-Dense Material Phases', in Veiko, Vadim p., Konov, Vitaly I. (Eds.) (ed.), Fundamentals of Laser-Assisted Micro- and Nanotechnologies, Springer International Publishing AG, Berlin, pp. 3-26.
- Rapp, L, Haberl, B, Bradby, J et al. 2014, 'Confined micro-explosion induced by ultrashort laser pulse at SiO2/Si interface', Applied Physics A: Materials Science and Processing, vol. 114, no. 1, pp. 33-43.
- Haberl, B, Guthrie, M, Malone, B et al. 2014, 'Controlled formation of metastable germanium polymorphs', Physical Review B, vol. 89, no. 14, pp. 1-6.
- Rapp, L, Haberl, B, Pickard, C et al. 2014, 'Experimental observation for new polymorphs of silicon formed through ultrafast-laser-induced microexplosion', 2014 IEEE International Conference Laser Optics, LO 2014, IEEE Computer Society, St Petersburg Russia, p. 1.
- Mailoa, J, Akey, A, Simmons, C et al. 2014, 'Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon', 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, IEEE, USA, pp. 1073-1076.
- Mailoa, J, Akey, A, Simmons, C et al. 2014, 'Room-temperature sub-band gap optoelectronic response of hyperdoped silicon', Nature Communications, vol. 5, no. 3011, pp. 1-8.
- Mangalampalli, S, Haberl, B, Williams, J et al. 2014, 'Temperature dependent deformation mechanisms in pure amorphous silicon', Journal of Applied Physics, vol. 115, no. 11, pp. 1-10.
- Deshmukh, S, Haberl, B, Ruffell, S et al. 2014, 'Phase transformation pathways in amorphous germanium under indentation pressure', Journal of Applied Physics, vol. 115, no. 15, pp. 153502/1-10.
- Sprouster, D, Ruffell, S, Bradby, J et al. 2014, 'Quantitative electromechanical characterization of materials using conductive ceramic tips', Acta Materialia, vol. 71, pp. 153-163.
- Haberl, B, Guthrie, M, Sprouster, D et al. 2013, 'New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities', Journal of Applied Crystallography, vol. 46, no. 3, pp. 758-768.
- Williams, J 2013, 'Ion beams and channelling: The early days with Jak Kelly', Journal and Proceedings of the Royal Society of New South Wales, vol. 146, no. 449-450, pp. 110-115.
- Johnson, B, Haberl, B, Deshmukh, S et al. 2013, 'Evidence for the R8 phase of germanium', Physical Review Letters, vol. 110, no. 8, pp. 1-5.
- Bradby, J, Williams, J, Haberl, B et al. 2013, 'Hexagonal germanium formed via a pressure-induced phase transformation of amorphous germanium under controlled nanoindentation', Physica Status Solidi: Rapid Research Letters, vol. 7, no. 5, pp. 355-359.
- Umezu, I, Warrender, J, Charnvanichborikarn, S et al. 2013, 'Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens', Journal of Applied Physics, vol. 113, no. 21, p. 213501.
- Rapp, L, Haberl, B, Bradby, J et al. 2013, 'Selective localised modifications of silicon crystal by ultrafast laser induced micro-explosion', XVIII Laser Applications in Microelectronic and Optoelectronic Manufacturing LAMOM 2013, ed. Xianfan Xu, Guido Hennig, Yoshiki Nakata, Stephan W. Roth,, SPIE, Washington, pp. 1-6.
- Rapp, L, Haberl, B, Bradby, J et al. 2013, 'Evidence of new high-pressure silicon phases in Fs-laser induced confined microexplosion', CLEO: Science and Innovations, CLEO_SI 2013, Optical Society of American (OSA), San Jose, CA, p. 2.
- Recht, D, Smith, M, Charnvanichborikarn, S et al. 2013, 'Supersaturating silicon with transition metals by ion implantation and pulsed laser melting', Journal of Applied Physics, vol. 114, no. 12.
- Bayu Aji, L B, Ruffell, S, Haberl B et al. 'Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon', Journal of Materials Research, vol. 28, no. 8, pp. 1056-1060.
- Bhuyan, S, Bradby, J, Ruffell, S et al. 2012, 'Phase stability of silicon during indentation at elevated temperature: evidence for a direct transformation from metallic Si-II to diamond cubic Si-I', MRS Communications, vol. 2, no. 1, pp. 9-12.
- Johnson, B, Villis, B, Burgess, J et al. 2012, 'Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon', Journal of Applied Physics, vol. 111, no. 9, pp. 094910/1-8.
- Charnvanichborikarn, S, Wong Leung, Y, Jagadish, C et al. 2012, 'Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon', MRS Communications, vol. 2, no. 3, pp. 101-105.
- Haberl, B, Bayu Aji, L, Williams, J et al. 2012, 'The indentation hardness of silicon measured by instrumented indentation: What does it mean?', Journal of Materials Research, vol. 27, no. 24, pp. 3066-3072.
- Johnson, B, Stavrias, N, Haberl, B et al. 2012, 'Raman study on the phase transformations of the meta-stable phases of Si induced by indentation', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 89-90.
- Deshmukh, S, Haberl, B, Williams, J et al. 2012, 'Deformation of Amorphous Germanium by Nanoindentation', Australian Institute of Physics Congress (AIP 2012), RMIT Publishing, Melbourne Australia, p. 1.
- Bayu Aji, L, Ruffell, S, Haberl, B et al. 2012, 'Structural Relaxation of Ion-implanted Amorphous Silicon', Australian Institute of Physics Congress (AIP 2012), RMIT Publishing, Melbourne Australia, p. 1.
- Haberl, B, Bradby, J & Williams, J 2012, 'Measuring the Hardness of Silicon', Australian Institute of Physics Congress (AIP 2012), RMIT Publishing, Melbourne Australia, p. 1.
- Mangalampalli, S, Bradby, J & Williams, J 2012, 'Controlled Temperature Indentation of Si to Investigate the Phase Transformations', Australian Institute of Physics Congress (AIP 2012), RMIT Publishing, Melbourne Australia, p. 1.
- Wong, S, Bradby, J & Williams, J 2012, 'Silicon High-Pressure Phases under High Load Nanoindentation', Australian Institute of Physics Congress (AIP 2012), RMIT Publishing, Melbourne Australia, p. 1.
- Haberl, B, Guthrie, M, Williams, J et al. 2012, 'A New Crystalline Phase of Silicon Formed from Indentation-Induced High-Pressure Phases', Australian Institute of Physics Congress (AIP 2012), RMIT Publishing, Melbourne Australia, p. 1.
- Persans, P, Berry, N, Recht, D et al. 2012, 'Photocarrier lifetime and transport in silicon supersaturated with sulfur', Applied Physics Letters, vol. 101, no. 11.
- Borisenko, K, Haberl, B, Liu, A et al 2012, 'Medium-range order in amorphous silicon investigated by constrained structural relaxation of two-body and four-body electron diffraction data', Acta Materlialia, vol. 60, no. 1, pp. 359-375.
- Haberl, B, Boyle, S, Li, T et al. 2011, 'Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing', Journal of Applied Physics, vol. 110, no. 9, pp. 1-3.
- Sprouster, D, Ruffell, S, Bradby, J et al. 2011, 'Structural characterization of B-doped diamond nanoindentation tips', Journal of Materials Research, vol. 26, no. 24, pp. 3051-3057.
- Johnson, B, Haberl, B, Bradby, J et al. 2011, 'Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation', Physical Review B: Condensed Matter and Materials, vol. 83, no. 23, pp. 235205-1 - 235205-8.
- Ruffell, S, Knights, A, Bradby, J et al. 2011, 'Impurity-free seeded crystallization of amorphous silicon by nanoindentation', Journal of Applied Physics, vol. 110, no. 8, pp. 083707-4.
- Umezu, I, Kohno, A, Warrender, J et al. 2011, 'Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon', International Conference on the Physics of Semiconductors 2010, American Institute of Physics (AIP), Seoul South Korea, pp. 51-52.
- Ruffell, S, Sears, K, Bradby, J et al. 2011, 'Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation', Applied Physics Letters, vol. 98, no. 5, p. 052105.
- Ruffell, S, Sears, K, Knights, A et al. 2011, 'Experimental evidence for semiconducting behavior of Si-XII', Physical Review B: Condensed Matter and Materials, vol. 83, no. 7, p. 075316.
- McCallum, J, Villis, B, Johnson, B et al. 2011, 'Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon', Physica Status Solidi A, vol. 208, no. 3, pp. 620-623.
- Pan, S, Recht, D, Charnvanichborikarn, S et al. 2011, 'Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens', Applied Physics Letters, vol. 98, no. 12, p. 121913.
- Crompton, R, Dracoulis, G, Lewis, B et al. 2011, 'John Henry Carver 1926 - 2004', Historical Records of Australian Science, vol. 22, no. 1, pp. 53-79.
- Williams, J, De Medeiros Azevedo, G, Bernas, H et al. 2010, 'Ion-Beam-Induced Amorphization and Epitaxial Crystallization of Silicon', in Harry Bernas (ed.), Topics in Applied Physics 116: Materials Science with Ion Beams, Springer, Berlin, pp. 73-111.
- Williams, J & Wong Leung, Y 2010, 'Voids and Nanocavities in Silicon', in Harry Bernas (ed.), Topics in Applied Physics 116: Materials Science with Ion Beams, Springer, Berlin, pp. 113-146.
- Burgess, J, Johnson, B, Villis, B et al. 2010, 'Comparison between implanted boron and phosphorus in silicon wafers', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 225-226.
- Wang, Y, Ruffell, S, Sears, K et al. 2010, 'Electrical properties of Si-XII and Si-III formed by nanoindentation', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), ed. H. Hoe Tan, Institute of Electrical and Electronics Engineers (IEEE Inc), Australia, pp. 105-106.
- Oliver, D, Bradby, J, Williams, J et al. 2009, 'Rate-dependent phase transformations in nanoindented germanium', Journal of Applied Physics, vol. 105, no. 12, pp. 1-4.
- Ruffell, S & Williams, J 2009, 'Effect of oxygen on nanoscale indentation-induced phase transformations in amorphous silicon', 2009 MRS Spring Meeting, Conference Organising Committee, San Francisco, CA, pp. 1-6.
- Charnvanichborikarn, S, Villis, B, Johnson, B et al. 2010, 'Effect of boron on interstitial-related luminescence centers in silicon', Applied Physics Letters, vol. 96, no. 5, p. 051906.
- Bob, B, Kohno, A, Charnvanichborikarn, S et al. 2010, 'Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting', Journal of Applied Physics, vol. 107, no. 12, pp. 1-5.
- Fujisawa PhD, N, Ruffell, S, Bradby, J et al. 2009, 'Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions', Journal of Applied Physics, vol. 105, no. 106111, pp. 1-3.
- Haberl, B, Liu, A, Bradby, J et al. 2009, 'Structural characterization of pressure-induced amorphous silicon', Physical Review B: Condensed Matter and Materials, vol. 79, no. 155209, pp. 1-8.
- Oliver, D, Bradby, J, Ruffell, S et al. 2009, 'Nanoindentation-induced phase transformation in relaxed and unrelaxed ion-implanted amorphous germanium', Journal of Applied Physics, vol. 106, no. 0935509, pp. 1-6.
- Ruffell, S, Vedi, J, Bradby, J et al. 2009, 'Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon', Journal of Applied Physics, vol. 106, no. 123511, pp. 1-6.
- Ruffell, S, Haberl, B, Koenig, S et al. 2009, 'Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon', Journal of Applied Physics, vol. 105, no. 093513, pp. 1-8.
- Oliver, D, Ruffell, S, Bradby, J et al. 2009, 'Nanoindentation of ion-implanted crystalline germanium', Physical Review B: Condensed Matter and Materials, vol. 80, no. 115210, pp. 1-8.
- Ruffell, S, Vedi, J, Bradby, J et al. 2009, 'Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon', Journal of Applied Physics, vol. 105, no. 083520, pp. 1-6.
- Ruffell, S, Bradby, J, Williams, J et al. 2009, 'Nanoindentation-induced phase transformations in silicon at elevated temperatures', Nanotechnology, vol. 20, no. 135603, pp. 1-5.
- Charnvanichborikarn, S, Conway, M, Wong Leung, Y et al. 2009, 'Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates', Nanotechnology, vol. 20, no. 18, p. 6.
- Charnvanichborikarn, S, Wong Leung, Y & Williams, J 2009, 'Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation', Journal of Applied Physics, vol. 106, no. 10, pp. 103526/1-8.
- Chen, H, Zhang, H, Fu, L et al. 2008, 'Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement', Applied Physics Letters, vol. 92, no. 243105, pp. 1-3.
- Oliver, D, Bradby, J, Williams, J et al. 2008, 'Thickness-dependent phase transformation in nanoindented germanium thin films', Nanotechnology, vol. 19, no. 475709, pp. 1-8.
- Bao, J, Charnvanichborikarn, S, Yang, Y et al. 2008, 'Point Defect Engineered Si Sub-Bandgap Light-emitting Diodes', Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV 2007, ed. H H Tan, J-C Chiao, L Faraone, C Jagadish, J Williams, A R Wilson, SPIE - The International Society for Optical Engineering, USA, pp. 1-8.
- Ruffell, S, Bradby, J, Williams, J et al. 2008, 'In-situ electrical probing of zones of nanoindentation-induced phases of silicon', Materials Research Society Symposium Proceedings, vol. 1146, pp. 1-6.
- Fujisawa PhD, N, Keikotlhaile, R, Bradby, J et al. 2008, 'Indentation-induced phase transformations in silicon as a function of history of unloading', Journal of Materials Research, vol. 23, no. 10, pp. 2645-2649.
- Oliver, D, Lawn, B, Cook, R et al. 2008, 'Giant pop-ins in nanoindented silicon and germanium caused by lateral cracking', Journal of Materials Research, vol. 23, no. 2, pp. 297-300.
- Chen, H, Chen, Y, Liu, Y et al. 2008, 'Rare-earth doped boron nitride nanotubes', Materials Science and Engineering B, vol. 146, no. 1-3, pp. 189-192.
- Chen, H, Zhang, H, Chen, Y et al. 2008, 'Cathodoluminescence of Boron Nitride Nanotubes Doped by Europium', Journal of the Australian Ceramics Society, vol. 44, no. 2, pp. 68-70.
- Maxwell, I, Williams, J, Bradby, J et al 2008, A Semiconductor Doping Process, WO 2008/070925 A1, Australia.
- Chen, H, Chen, Y, Liu, Y et al. 2007, 'Light emission and excitonic effect of boron nitride nanotubes observed by photoluminescent spectra', Optical Materials, vol. 29, no. 11, pp. 1295-1298.
- Chen, H, Chen, Y, Li, C et al. 2007, 'Eu-doped Boron Nitride Nanotubes as a Nanometer-Sized Visible-Light Source', Advanced Materials, vol. 19, no. 14, pp. 1845-1848.
- Oliver, D, Bradby, J, Williams, J et al. 2007, 'Indentation-Induced Damage Mechanisms in Germanium', Materials Research Society Meeting Fall 2006, ed. W. MoberlyChan, H. Colijn, R. Langford, A. Marshall, Materials Research Society, United States, p. 6.
- Bao, J, Tabbal, M, Kim, T et al. 2007, 'Efficient point defect engineered si light-emitting diode at 1.218 μm', Conference on Lasers and Electro-Optics, Quantum Electronics and Laser Science/Conference on Photonic Applications, Systems and Technologies (CLEO/QELS 2007), ed. Donald Harter, Detao Du, Marc Nantel, et al, Optical Society of America, USA, pp. 1-2.
- Tabbal, M, Aziz, M, Madi, C et al. 2007, 'Excimer laser processing of novel materials for optoelectronic and spintronic applications', Photon Processing in Microelectronics and Photonics, ed. Craig B. Arnold; Tatsuo Okada; Michel Meunier; Andrew S. Holmes; David B. Geoheg, SPIE - The International Society for Optical Engineering, Bellingham, WA, USA, p. 645803.
- Chen, Y, Chen, H, Yu, J et al. 2007, 'Focused ion beam milling as a universal template technique for patterned growth of carbon nanotubes', Applied Physics Letters, vol. 90, no. 093126, pp. 1-3.
- Ruffell, S, Bradby, J, Williams, J et al. 2007, 'Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon', Journal of Applied Physics, vol. 102, pp. 063521 1-8.
- Oliver, D, Bradby, J, Williams, J et al. 2007, 'Giant pop-ins and amorphization in germanium during indentation', Journal of Applied Physics, vol. 101, pp. 043524 1-9.
- Ruffell, S, Bradby, J, Fujisawa PhD, N et al. 2007, 'Indentification of nanoindentation-induced phase changes in silicon by in situ electrical characterization', Journal of Applied Physics, vol. 101, pp. 083531 1-7.
- Fujisawa PhD, N, Williams, J & Swain, M 2007, 'On the cyclic indentation behavior of crystalline silicon with a sharp tip', Journal of Materials Research, vol. 22, no. 11, pp. 2992-2997.
- Ruffell, S, Bradby, J & Williams, J 2007, 'Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon', Applied Physics Letters, vol. 90, pp. 131901 1-3.
- Bao, J, Tabbal, M, Kim, T et al. 2007, 'Point defect engineered Si sub-bandgap light-emitting diode', Optics Express, vol. 15, no. 11, pp. 6727-6733.
- Rao, R, Bradby, J & Williams, J 2007, 'Patterning of silicon by indentation and chemical etching', Applied Physics Letters, vol. 91, pp. 123113 1-3.
- Ruffell, S, Bradby, J, Williams, J et al. 2007, 'An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon', Journal of Materials Research, vol. 22, no. 3, pp. 578-586.
- Rao, R, Bradby, J, Ruffell, S et al. 2007, 'Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon', Microelectronics Journal, vol. 38, pp. 722-726.
- Haberl, B, Bradby, J, Ruffell, S et al. 2006, 'Phase Transformations Induced by Spherical Indentation in Ion-implanted Amorphous Silicon', Journal of Applied Physics, vol. 100, no. 1, pp. 013520-1-9.
- Williams, J, De Medeiros Azevedo, G & Kinomura, A 2006, 'Some Ion-beam Modification Issues: Ion-induced Amorphisation and Crystallisation of Silicon', Ion Beam Science Symposium 2006, ed. P Sigmund, Royal Danish Academy of Sciences and Letters, Denmark, pp. 227-261.
- Chen, H, Chen, Y, Liu, Y et al. 2006, 'Optical Properties of BN Nanotubes', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 64-67.
- Chen, Y & Williams, J 2006, 'Synthesis of Boron Nitride Nanotubes Using a Ball-Milling and Annealing Method', in Mark Schulz, Ajit Kelkar, Mannur Sundaresan (ed.), Nanoengineering of Structural, Functional, and Smart Materials, CRC Press LLC, Boca Raton USA, pp. 169-195.
- Chen, H, Chen, Y, Yu, J et al. 2006, 'Purification of Boron Nitride Nanotubes', Chemical Physics Letters, vol. 425, pp. 315-319.
- Ruffell, S, Bradby, J & Williams, J 2006, 'High Pressure Crystalline Phase Formation during Nanoindentation: Amorphous versus Crystalline Silicon', Applied Physics Letters, vol. 89, no. 9, pp. 091919-1-3.
- Chen, H, Chen, Y, Li, C et al. 2006, 'High-Yield Boron Nitride Bamboo Nanotubes', Annual Condensed Matter and Materials Meeting 2006, ed. Maxim Avdeev, Australian Institute of Physics, Parkville Victoria, pp. 1-3.
- Williams, J, Conway, M & Charnvanichborikarn, S 2006, 'Implantion-Induced Nanocavities and Au Nanoparticles in Si and Si02', International Conference on Nanoscience and Nanotechnology (ICONN 2006), ed. C. Jagadish & G.Q.Max Lu, Institute of Electrical and Electronics Engineers (IEEE Inc), Brisbane Australia, pp. 130-133.
- Rao, R, Bradby, J & Williams, J 2006, 'Nanoindentation-Induced Phase Transformation in Silicon', European Society for Neurochemistry Conference (ENS 2006), ed. Conference Program Committee, TIMA Editions, France, pp. 46-49.
- Williams, J, Kucheyev, S, Tan, H et al. 2005, 'Ion Irradiation-induced Disordering of Semiconductors: Defect Structures and Applications', Philosophical Magazine, vol. 85, no. 4-7, pp. 677-687.
- Kinomura, A, Horino, Y, Nakano, Y et al. 2005, 'Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon', Journal of Applied Physics, vol. 98, no. 6, pp. 066102-1-3.
- Haberl, B, Bradby, J, Swain, M et al. 2005, 'Response to Comment on Phase transformations induced in relaxed amorphous silicon by indentation at room temperature', Applied Physics Letters, vol. 87, p. 016103.
- Bradby, J, Williams, J & Swain, M 2004, 'Pop-In Events Induced by Spherical Indentation in Compound Semiconductors', Journal of Materials Research, vol. 19, no. 1, pp. 380-386.
- Kucheyev, S, Williams, J & Jagadish, C 2004, 'Ion-Beam-Defect Processes in Group-III Nitrides and ZnO', Vacuum, vol. 73, pp. 93-104.
- Chen, Y, Conway, M, Fitzgerald, J et al. 2004, 'The Nucleation and Growth of Carbon Nanotubes in a Mechano-Thermal Process', Carbon, vol. 42, pp. 1543-1548.
- Kucheyev, S, Williams, J, Zou, J et al. 2004, 'Dynamic Annealing in III-Nitrides Under Ion Bombardment', Journal of Applied Physics, vol. 95, no. 6, pp. 3048-3054.
- Kucheyev, S, Timmers, H, Zou, J et al. 2004, 'Lattice Damage Produced in GaN by Swift Heavy Ions', Journal of Applied Physics, vol. 95, no. 10, pp. 5360-5365.
- Haberl, B, Bradby, J, Swain, M et al. 2004, 'Phase Transformations Induced in Relaxed Amorphous Silicon by Indentation at Room Temperature', Applied Physics Letters, vol. 85, no. 23, pp. 5559-5561.
- Williams, J, Elliman, R, Tan, H et al. 2003, 'Production and Processing of Semiconductor Nanocrystals and Nanostructures for Photonic Applications', National Conference and Exhibition on Nanotechnology 2003, ed. R Wuhrer, Institute of Materials Engineering Australasia, Melbourne, pp. 74-80.
- MacDonald, D, Maeckel, H, Doshi, S et al. 2003, 'Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon', Applied Physics Letters, vol. 82, no. 18, pp. 2987-2989.
- Ruault, M, Ridgway, M, Fortuna, F et al. 2003, 'In-situ Microscopy Study of Nanocavity Shrinkage in Si under Ion Beam Irradiation', European Physical Journal - Applied Physics, vol. 23, pp. 39-40.
- Ip, K, Overberg, M, Heo, Y et al. 2003, 'Hydrogen Incorporation, Diffusivity and Evolution in Bulk ZnO', Solid-State Electronics, vol. 47, pp. 2255-2259.
- Ruault, M, Ridgway, M, Fortuna, F et al. 2003, 'Shrinkage Mechanism of Nanocavities in Amorphous Si under Ion Irradiation: An in situ Study', Nuclear Instruments and Methods in Physics Research: Section B, vol. 206, pp. 912-915.
- Kucheyev, S, Jagadish, C, Williams, J et al. 2003, 'Implant Isolation of ZnO', Journal of Applied Physics, vol. 93, no. 5, pp. 2972-2976.
- Wang, Y, Zou, J, Kucheyev, S et al. 2003, 'Nature of Planar Defects in Ion-implanted GaN', Electrochemical and Solid-State Letters, vol. 6, no. 3, pp. G34-G36.
- Ip, K, Overberg, M, Baik, K et al. 2003, 'ICP Dry Etching of ZnO and Effects of Hydrogen', Solid-State Electronics, vol. 47, pp. 2289-2294.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2003, 'Ion-Beam-Produced Structural Defects in ZnO', Physical Review B, vol. 67, no. 9, pp. 094115-1-11.
- Bradby, J, Williams, J & Swain, M 2003, 'In Situ Electrical Characterization of Phase Transformations in Si during Indentation', Physical Review B, vol. 67, pp. 085205-1-9.
- Bradby, J, Kucheyev, S, Williams, J et al. 2002, 'Contact-induced Defect Propagation in ZnO', Applied Physics Letters, vol. 80, no. 24, pp. 4537-4539.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2002, 'Nanoindentation-induced Deformation of Ge', Applied Physics Letters, vol. 80, no. 15, pp. 2651-2653.
- Kucheyev, S, Deenapanray, P, Jagadish, C et al. 2002, 'Electrical Isolation of ZnO by Ion Bombardment', Applied Physics Letters, vol. 81, no. 18, pp. 3350-3352.
- De Medeiros Azevedo, G, Williams, J, Young, I et al. 2002, 'In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 190, pp. 772-776.
- Bradby, J, Kucheyev, S, Williams, J et al. 2002, 'Indentation-induced Damage in GaN Epilayers', Applied Physics Letters, vol. 80, no. 3, pp. 383-385.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2002, 'Blistering of H-implanted GaN', Journal of Applied Physics, vol. 91, no. 6, pp. 3928-3930.
- Kucheyev, S, Boudinov, H, Williams, J et al. 2002, 'Effect of Irradiation Temperature and Ion Flux on Electrical Isolation of GaN', Journal of Applied Physics, vol. 91, no. 7, pp. 4117-4120.
- Kucheyev, S, Bradby, J, Williams, J et al. 2002, 'Mechanical Deformation of Single-crystal ZnO', Applied Physics Letters, vol. 80, no. 6, pp. 956-958.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2002, 'Spherical Indentation of Compound Semiconductors', Philosophical Magazine A, vol. 82, no. 10, pp. 1931-1939.
- Kucheyev, S, Toth, M, Phillips, M et al. 2002, 'X-ray Spectrometry Investigation of Electrical Isolation in GaN', Journal of Applied Physics, vol. 91, no. 6, pp. 3940-3942.
- Gurarie, V, Otsuka, P, Jamieson, D et al. 2002, 'The Effect of Crystal Orientation on Thermal Shock-induced Fracture and Properties of Ion Implated Sapphire', Nuclear Instruments and Methods in Physics Research: Section B, vol. 190, pp. 751-755.
- Ip, K, Overberg, M, Heo, Y et al. 2002, 'Thermal Stability of Ion-implanted Hydrogen in ZnO', Applied Physics Letters, vol. 81, no. 21, pp. 3996-3998.
- Ruault, M, Fortuna, F, Bernas, H et al. 2002, 'How Nanocavities in Amorphous Si Shrink Under Ion Beam Irradiation: An in situ Study', Applied Physics Letters, vol. 81, no. 14, pp. 2617-2619.
- Kucheyev, S, Williams, J, Zou, J et al. 2002, 'Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature', Nuclear Instruments and Methods in Physics Research: Section B, vol. 190, pp. 782-786.
- Kinomura, A, Williams, J, Tsubouchi, N et al. 2002, 'Platinum Atom Location on the Internal Walls of Nanocavities Investigated by Ion Channeling Analysis', Nuclear Instruments and Methods in Physics Research: Section B, vol. 190, pp. 606-610.
- Kucheyev, S, Toth, M, Phillips, M et al. 2002, 'Chemical Origin of the Yellow Luminescence in GaN', Journal of Applied Physics, vol. 91, no. 9, pp. 5857-5874.
- Kucheyev, S, Williams, J, Zou, J et al. 2002, 'Structural Disorder in Ion-implanted AlxGa1-xN', Applied Physics Letters, vol. 80, no. 5, pp. 787-789.
- Kucheyev, S, Williams, J, Zou, J et al. 2002, 'Ion-beam-produced Damage and its Stability in AIN Films', Journal of Applied Physics, vol. 92, no. 7, pp. 3554-3558.
- Chen, Y, Conway, M, Williams, J et al. 2002, 'Large-quantity Production of High-yield Boron Nitride Nanotubes', Journal of Materials Research, vol. 17, no. 8, pp. 1896-1899.
- Williams, J, Ridgway, M, Conway, M et al. 2001, 'Interaction of Defects and Metals with Nanocavities in Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 178, pp. 33-43.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2001, 'Mechanical Deformation in Silicon by Micro-indentation', Journal of Materials Research, vol. 16, no. 5, pp. 1500-1507.
- Gurarie, V, Otsuka, P, Williams, J et al. 2001, 'Ion Beam Modification of Thermal Stress Resistance of MgO Single Crystals with Different Crystallographic Faces', Nuclear Instruments and Methods in Physics Research: Section B, vol. 178, pp. 138-143.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN', Nuclear Instruments and Methods in Physics Research: Section B, vol. 178, pp. 209-213.
- Williams, J, Ridgway, M, Conway, M et al. 2001, 'Interactions of Point Defects and Impurities With Open Volume Defects in Silicon', Materials Research Society Meeting Fall 2000, ed. Moss, S; Heinig, K.-H; Poker, D.B, Materials Research Society, Warrendale, USA, pp. 02.4.1-02.4.11.
- Williams, J, Conway, M, Williams, B et al. 2001, 'Direct Observation of Voids in the Vacancy Excess Region of Ion Bombarded Silicon', Applied Physics Letters, vol. 78, no. 19, pp. 2867-2869.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'Ion-beam-induced reconstruction of amorphous GaN', Physical Review B, vol. 63, pp. 113202-1-4.
- Boudinov, H, Kucheyev, S, Williams, J et al. 2001, 'Electrical isolation of GaN by MeV ion irradiation', Applied Physics Letters, vol. 78, no. 7, pp. 943-945.
- Stritzker, B, Petravic, M, Wong Leung, Y et al. 2001, 'Selectivity of Nanocavities and Dislocations for Gettering of Cu and Fe in Silicon', Applied Physics Letters, vol. 78, no. 18, pp. 2682-2684.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2001, 'Mechanical Deformation of InP and GaAs by Spherical Indentation', Applied Physics Letters, vol. 78, no. 21, pp. 3235-3237.
- Kucheyev, S, Williams, J & Pearton, S 2001, 'Ion Implantation into GaN', Materials Science and Engineering R-Reports, vol. 33, pp. 51-107.
- Petravic, M, Williams, J & Deenapanray, P 2001, 'Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities', 199th Meeting of the Electrochemical Society, ed. Sundaram, K.B.; Deen, M.J.; Landheer, D.; Brown, W.D.; Misra, D.; Allendorf, M.D, Electrochemical Society Inc, Pennington, USA, pp. 147-155.
- Kucheyev, S, Bradby, J, Williams, J et al. 2001, 'Deformation Behavior of Ion-Beam-Modified GaN', Applied Physics Letters, vol. 78, no. 2, pp. 156-158.
- Kucheyev, S, Toth, M, Phillips, M et al. 2001, 'Cathodoluminescence Depth Profiling of Ion-Implanted GaN', Applied Physics Letters, vol. 78, no. 1, pp. 34-36.
- Kucheyev, S, Williams, J, Titov, A et al. 2001, 'Effect of the density of collision cascades on implantation damage in GaN', Applied Physics Letters, vol. 78, no. 18, pp. 2694-2696.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2001, 'Effect of ion species on the accumulation of ion-beam damage in GaN', Physical Review B, vol. 64, pp. 035202/1-10.
- Kucheyev, S, Toth, M, Phillips, M et al. 2001, 'Effects of excitation density on cathodoluminescence from GaN', Applied Physics Letters, vol. 79, no. 14, pp. 2154-2156.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'Implantation-Produced Structural Damage in InxGa1-xN', Applied Physics Letters, vol. 79, no. 5, pp. 602-604.
- Zhu, X, Williams, J, Conway, M et al. 2001, 'Direct Observation of Irradiation-Induced Nanocavity Shrinkage in Si', Applied Physics Letters, vol. 79, no. 21, pp. 3416-3418.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'Ion Beam Damage Processes in GaN', III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV), ed. Ren, F.; Buckley, D.N.; Chu, S.N.G.; Pearton, S.J., Electrochemical Society Inc, Pennington, USA, pp. 150-160.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2001, 'Mechanical Deformation of Crystalline Silicon During Nanoindentation', Materials Research Society Meeting Fall 2000, ed. Moss, S; Heinig, K.-H; Poker, D.B, Materials Research Society, Warrendale, USA, pp. Q8.10.1-6.
- Kucheyev, S, Bradby, J, Williams, J et al. 2001, 'Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films', Materials Research Society Meeting Fall 2000, ed. Moss, S; Heinig, K.-H; Poker, D.B, Materials Research Society, Warrendale, USA, pp. Q5.5.1-Q5.5.6.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures', Applied Physics Letters, vol. 78, no. 10, pp. 1373-1375.
- Kucheyev, S, Williams, J, Zou, J et al. 2001, 'High-dose ion implantation into GaN', Nuclear Instruments and Methods in Physics Research: Section B, vol. 175-177, pp. 214-218.
- Stritzker, B, Petravic, M, Wong Leung, Y et al 2001, 'Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 175-177, pp. 154-158.
- Toth, M, Phillips, M, Kucheyev, S et al. 2000, 'Charge Contrast in SE Images Obtained Using the ESEM', Institute of Physics Conference No 165 (2000), American Institute of Aeronautics and Astronautics, unknown, pp. 275-276.
- Chen, Y, Chadderton, L, Williams, J et al. 2000, 'Solid-State Formation of Carbon and Boron Nitride Nanotubes', Materials Science Forum, vol. 343-346, pp. 63-67.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Ion-Beam-Induced Porosity of GaN', Applied Physics Letters, vol. 77, pp. 1455-1457.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Damage Buildup in GaN under Ion Bombardment', Physical Review B, vol. 62, pp. 7510-7522.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN', Applied Physics Letters, vol. 76, pp. 3899-3901.
- Kuball, M, Hayes, J, Suski, T et al. 2000, 'High-Pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet Micro-Raman scattering', Journal of Applied Physics, vol. 87, pp. 2736-2741.
- Kucheyev, S, Williams, J, Zou, J et al. 2000, 'Ion beam induced dissociation and bubble formation in GaN', Applied Physics Letters, vol. 77, pp. 3577-3579.
- Kucheyev, S, Bradby, J, Williams, J et al. 2000, 'Nanoindentation of Epitaxial GaN Films', Applied Physics Letters, vol. 77, pp. 3373-3375.
- Kucheyev, S, Williams, J, Jagadish, C et al. 2000, 'Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment', Journal of Applied Physics, vol. 88, pp. 5493-5495.
- Bradby, J, Williams, J, Wong Leung, Y et al. 2000, 'Transmission Electron Microscopy Observation of Deformation Microstructure under Spherical Indentation in Silicon', Applied Physics Letters, vol. 77, pp. 3749-3751.
- Toth, M, Kucheyev, S, Williams, J et al. 2000, 'Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy', Applied Physics Letters, vol. 77, pp. 1342-1344.
- Williams, J, Young, I & Conway, M 2000, 'Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments', Nuclear Instruments and Methods in Physics Research: Section B, vol. 161-163, pp. 505-509.
- Williams, J, Zhu, X, Ridgway, M et al. 2000, 'Preferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion Irradiation', Applied Physics Letters, vol. 77, pp. 4280-4282.
- Zhu, X, Williams, J & McCallum, J 1999, 'Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 148, pp. 268-272.
- Zhu, X, Zhang, H, Williams, J et al. 1999, 'Low-Temperature Thermopower in Nanostructured Silver', Applied Physics Letters, vol. 75, no. 1, pp. 136-138.
- Kinomura, A, Chayahara, A, Tsubouchi, N et al. 1999, 'Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization', Nuclear Instruments and Methods in Physics Research: Section B, vol. 148, pp. 370-374.
- Li, Z, Williams, J, Llewellyn, D et al. 1999, 'Mechanochemical Reaction and Formation of an Amorphous Nitride Phase During Ball Milling of Si in NH3', Applied Physics Letters, vol. 75, no. 20, pp. 3111-3113.
- Jar, P & Williams, J 1999, 'Investigation of Combustion Reactions under Different Milling Conditions', Journal of Metastable and Nanocrystalline Materials, vol. 2-6, pp. 79-84.
- Zhu, X, Williams, J, Llewellyn, D et al. 1999, 'Instability of Nanocavities in Amorphous Silicon', Applied Physics Letters, vol. 74, no. 16, pp. 2313-2315.
- Williams, J, Chen, Y, Wong Leung, Y et al. 1999, 'Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters', Journal of Materials Research, vol. 14, no. 6, pp. 2338-2343.
- Goldberg, R, Williams, J & Elliman, R 1999, 'Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon', Physical Review Letters, vol. 82, no. 4, pp. 771-774.
- Williams, J, Conway, M, Wong Leung, Y et al. 1999, 'The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon', Applied Physics Letters, vol. 75, no. 16, pp. 2424-2426.
- Chen, Y & Williams, J 1999, 'Mechanochemical Reactions in the System FETiO3-Si', Journal of Materials Research, vol. 13, no. 12, pp. 3499-4503.
- Gurarie, V, Jamieson, D, Orlov, A et al. 1999, 'Thermal Fatigue of Ion Implanted Magnesium Oxide Crystals', Nuclear Instruments and Methods in Physics Research: Section B, vol. 148, pp. 773-777.
- Kinomura, A, Williams, J & Fujii, K 1999, 'Mass Effects on Regrowth Rates and Activation Energies of Solid-Phase Epitaxy Induced by Ion Beams in Silicon', Physical Review B, vol. 59, no. 23, pp. 15 214-15 224.
- Chen, Y, Chadderton, L, Fitzgerald, J et al. 1999, 'A solid-state process for formation of boron nitride nanotubes', Applied Physics Letters, vol. 74, pp. 2960-2962.
- Wong Leung, Y, Williams, J, Kinomura, A et al. 1999, 'Diffusion and Transient Trapping of Metals in Silicon', Physical Review B, vol. 59, no. 11, pp. 7990-7998.
- Li, Z, Wong Leung, Y, Deenapanray, P et al. 1999, 'The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation', Nuclear Instruments and Methods in Physics Research: Section B, vol. 148, pp. 534-539.
- Willis, P, Fitzgerald, J & Williams, J 1999, 'Mechanochemical synthesis of boron nitride nanotubes', Materials Science Forum, pp. 173-178.
- Chen, Y, Fitzgerald, J, Williams, J et al. 1999, 'Synthesis of boron nitride nanotubes at low temperatures using reactive ball milling', Chemical Physics Letters, vol. 299(3-4), pp. 260-264.
- Chen, Y, Williams, J, Wang, G et al. 1999, 'Increased Dissolution of Ilmenite Induced by High-Energy Ball Milling', Materials Science and Engineering A, vol. 271/1-2, pp. 485-490.
Projects and Grants
Grants information is drawn from ARIES. To add or update Projects or Grants information please contact your College Research Office.
- Novel high quality GeSn alloys for mid-infrared photodetectors (Primary Investigator)
- New landscape of non-equilibrium material phases (Secondary Investigator)
- Developing new in-situ characterization capabilities for nanoindentation: exploring novel high pressure phases of silicon and germanium (Secondary Investigator)
- Near infrared silicon-based photodetector with dramatically enhanced efficiency (Primary Investigator)
- Exploiting deep sub-surface temperature-induced phase-transformations for an improved approach to semiconductor laser-dicing (Primary Investigator)
- The temperature-dependent phase transition behavior and possible polyamorphism of fully coordinated amorphous silicon (Primary Investigator)
- Understanding the structure and unusual properties of ion implanted amorphous germanium (Primary Investigator)
- State-of-the-art Hall effect system for detailed electrical characterisation in semiconductors (Secondary Investigator)
- Narrow band gap silicon: understanding and exploiting this new silicon phase (Primary Investigator)
- An Analytical Transmission Electron Microscope for the Investigation of Functional Materials, Earth Processes and Novel Condensed Matter (Secondary Investigator)
- Nanoscale optical microscopy facility (Secondary Investigator)
- A novel approach to direct nanopatterning of silicon for advanced phase-changed devices (Primary Investigator)
- Emerging Materials, Processes and Nanotechnologies for ICT, Manufacturing, Health, Environment and Energy Applications (Secondary Investigator)
- Defect-induced luminescence from ion-implanted silicon: Towards silicon photonics applications (Primary Investigator)
- An entirely new approach to low temperature fabrication of silicon-based thin film transistors (TFTs) for flat panel displays (Primary Investigator)
- Engineering nanoscale material properties by controlled-temperature indentation (Primary Investigator)
- Australian National Nanofabrication Facility (Secondary Investigator)
- Towards a High Density Silicon Phase Memory Device (Primary Investigator)
- Australian Research Network for Advanced Materials (Primary Investigator)
