Synthesis of Ge-Sn alloys by ion implantation and pulsed laser melting: Towards a group IV direct band gap semiconductor

Citation

Williams, J & Tran, T 2017, 'Synthesis of Ge-Sn alloys by ion implantation and pulsed laser melting: Towards a group IV direct band gap semiconductor', 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, IEEE, TBC, pp. 1-2.

Year

2017

Field of Research

  • Compound Semiconductors

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