Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys (vol 119, 094303, 2016)

Citation

Alkhaldi, H, Kremer, F, Bierschenk, T et al 2017, 'Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys (vol 119, 094303, 2016)', Journal of Applied Physics, vol. 121, no. 4, pp. 2pp.

Year

2017

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Elemental Semiconductors

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