Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

Citation

MacDonald, D, Maeckel, H, Doshi, S et al 2003, 'Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon', Applied Physics Letters, vol. 82, no. 18, pp. 2987-2989.

Year

2003

Fields of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified
  • Electronic And Magnetic Properties Of Condensed Matter; Superconductivity

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