The influence of capping layers on pore formation in Ge during ion implantation

Citation

Alkhaldi, H, Tran, T, Kremer, F et al. 2016, 'The influence of capping layers on pore formation in Ge during ion implantation', Journal of Applied Physics, vol. 120, no. 21, pp. 1-10.

Year

2016

ANU Authors

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

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