Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Citation

Tran, P, Pastor, D, Gandhi, H et al. 2016, 'Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material', Journal of Applied Physics, vol. 119, no. 18, p. 183102.

Year

2016

Field of Research

  • Surfaces And Structural Properties Of Condensed Matter

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