The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN

Citation

Kucheyev, S, Williams, J, Zou, J et al 2001, 'The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN', Nuclear Instruments and Methods in Physics Research: Section B, vol. 178, pp. 209-213.

Year

2001

Field of Research

  • Electrical And Electronic Engineering Not Elsewhere Classified

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