In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon

Citation

De Medeiros Azevedo, G, Williams, J, Young, I et al 2002, 'In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon', Nuclear Instruments and Methods in Physics Research: Section B, vol. 190, pp. 772-776.

Year

2002

Field of Research

  • Plasma Physics; Fusion Plasmas; Electrical Discharges

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