Emeritus Professor Robert Elliman
Areas of expertise
- Surfaces And Structural Properties Of Condensed Matter 020406
- Nanomaterials 100708
- Functional Materials 091205
- Metals And Alloy Materials 091207
- Electronic And Magnetic Properties Of Condensed Matter; Superconductivity 020404
- Photonics, Optoelectronics And Optical Communications 020504
- Condensed Matter Physics 0204
- Electrical And Electronic Engineering 0906
- Materials Engineering 0912
- Nanotechnology 1007
Research interests
Materials Science and Engineering
- Memristive behaviour in transition metal oxides.
- Memristive devices for neuromorphic computing.
- Nonvolatile memory technology (e.g. ReRAM).
- 2D materials and their applications
- Semiconductor nanotechnology.
Ion-Beam Modification and Analysis of Materials
- Ion-Implantation.
- Ion-beam synthesis of novel materials (graphene, nanocrystals, etc)
- Ion-beam induced defects and their interactions.
- Novel applications of ion-implantation.
- Radiation damage in reactor materials
Biography
Rob Elliman is an Emeritus Professor of Physics in the Research School of Physics at the Australian National University (ANU) and Director of the ANU ion-implantation Laboratory (iiLab), a node of the Heavy-Ion Accelerator Capabilty funded by NCRIS (National Collaborative Research Infrastructure Strategy). His research interests include: semiconductor materials and devices; memristive switching in transition metal oxides and its application in neuromorphic computing; and ion-beam modification and analysis of materials. He has published ~400 papers and several book chapters in these fields, and is a Fellow of the Australian Institute of Physics and a Fellow of the Institute of Physics (UK).
Available student projects
Student projects are available at: http://physics.anu.edu.au/eme/people/profile.php?ID=105&tab=available_projects
Current student projects
Current student projects are available at: http://physics.anu.edu.au/eme/people/profile.php?ID=105&tab=available_projects
Publications
- Nath, S, Nandi, S, Das, S et al. 2023, 'Thermal transport in metal-NbOx-metal cross-point devices and its effect on threshold switching characteristics', Nanoscale, vol. 15, no. 16.
- Salek, A, Le, P, Partridge, J et al. 2023, 'The structure and electronic properties of tetrahedrally bonded hydrogenated amorphous carbon', Applied Physics Letters, vol. 122, no. 18.
- Li, X, Wang, X, Li, P et al. 2023, 'Tri-State Memristors Based on Composable Discrete Devices', International Journal of Bifurcation and Chaos, vol. 33, no. 7.
- Nandi, S, Nath, S, Das, S et al. 2023, 'Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb2O5/Pt Memristors', ACS Applied Materials and Interfaces, vol. 15, no. 50, pp. 58613 - 58622.
- Jang, C, Adeyemi Salawu, Y, Kim, J et al. 2023, '2D Weyl-Semimetal States Achieved by a Thickness-Dependent Crossover and Topological Phase Transition in Bi0.96Sb0.04 Thin Films', Advanced Functional Materials, vol. 33, no. 51.
- Nath, S, Sun, X, Nandi, S et al. 2023, 'Harnessing Metal/Oxide Interlayer to Engineer the Memristive Response and Oscillation Dynamics of Two-Terminal Memristors', Advanced Functional Materials, vol. 33, no. 52, p. 2306428.
- Majhi, R, Rajbhar, M, Das, P et al. 2022, 'Low energy ion beam-induced joining of TiO2 nanoparticles', Journal of Alloys and Compounds, vol. 924.
- Drouhin, M, Li, S, Grelier, M et al. 2022, 'Characterization and modeling of spiking and bursting in experimental NbOx neuron', Neuromorphic Computing and Engineering, vol. 2, no. 4.
- Wang, X, Dong, C, Zhou, P et al. 2022, 'Low-Variance Memristor-Based Multi-Level Ternary Combinational Logic', IEEE Transactions on Circuits and Systems Part I: Regular Papers, vol. 69, no. 6.
- Jun Lee, W, Adeyemi Salawu, Y, Kim, H et al. 2022, 'Possible permanent Dirac- to Weyl-semimetal phase transition by ion implantation', Asia Materials NPG, vol. 14, no. 1, pp. 1-8.
- Nandi, S, Das, S, Cui, Y et al. 2022, 'Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching', ACS Applied Materials and Interfaces, vol. 14, no. 18, pp. 21270 - 21277.
- Liang, Y, Zhu, Q, Wang, G et al. 2022, 'Universal Dynamics Analysis of Locally-Active Memristors and Its Applications', IEEE Transactions on Circuits and Systems Part I: Regular Papers, vol. 69, no. 3, pp. 1278 - 1290.
- Das, S, Nandi, S, Marquez, C et al. 2022, 'Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator', Advanced Materials, vol. 35, no. 8, p. 2208477.
- Nandi, S, Puyoo, E, Nath, S et al. 2022, 'High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy', ACS Applied Materials and Interfaces, vol. 14, no. 25, pp. 29025-29031.
- Nath, S, Nandi, S, Ratcliff, T et al. 2021, 'Engineering the Threshold Switching Response of Nb2O5‑Based Memristors by Ti Doping', ACS Applied Materials and Interfaces, vol. 13, no. 2, pp. 2845-2852.
- Das, P, Moller, W, Elliman, R et al. 2021, 'Ion beam joining of ceramic and carbon-based nanostructures', Applied Surface Science, vol. 554.
- Liu, X, Zhang, P, Nath, S et al. 2021, 'Understanding composite negative differential resistance in niobium oxide memristors', Journal of Physics D: Applied Physics, vol. 55, no. 10, pp. 1-12.
- Nandi, S, Das, S, Estherby, C et al. 2020, 'Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides', Journal of Applied Physics, vol. 128, no. 24, pp. 1-7.
- Notthoff, C, Jordan, S, Hadley, A et al. 2020, 'Swift heavy ion irradiation of GaSb: From ion tracks to nanoporous networks', Physical Review Materials, vol. 4, no. 4, pp. 1-11.
- Nath, S, Nandi, S, El-Helou, A et al. 2020, 'Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices', Physical Review Applied, vol. 13, no. 6, pp. 1-10.
- Nandi, S, Nath, S, El-Helou, A et al. 2020, 'Electric Field- And Current-Induced Electroforming Modes in NbOx', ACS Applied Materials and Interfaces, vol. 12, no. 7, pp. 8422-8428.
- Nath, S, Nandi, S, Li, S et al. 2020, 'Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO x', Nanotechnology, vol. 31, no. 23, pp. 1-6.
- Trombini, H, Vos, M, Elliman, R et al. 2020, 'Depth profiling of ion-implanted samples by high-energy electron scattering', Journal of Physics D: Applied Physics, vol. 53.
- Mai, H, Lu, T, Sun, Q et al 2020, 'High performance bulk photovoltaics in narrow bandgap centrosymmetric ultrathin films', Materials Horizons, 7, 898–904.
- Nandi, S, Nath, S, El-Helou, A et al. 2019, 'Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbOx', Advanced Functional Materials, vol. 29, no. 50, pp. 1-8.
- Nandi, S, Nath, S, El Helou, A et al. 2019, 'Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx', Advanced Functional Materials, vol. 29, no. 50, pp. 1-8.
- Sulzbach, M, Selau, F, Trombini, H et al. 2019, 'Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling', Nuclear Instruments and Methods in Physics Research: Section B, vol. 441, pp. 8-11.
- Nath, S, Nandi, S, Li, S et al. 2019, 'Detection and spatial mapping of conductive filaments in metal/oxide/metal cross-point devices using a thin photoresist layer', Applied Physics Letters, vol. 114, no. 6, pp. -.
- Das, P, Rajbhar, M, Elliman, R et al. 2019, 'Nanoscale modification of one-dimensional single-crystalline cuprous oxide', Nanotechnology, vol. 30, no. 36, pp. 1-14.
- Li, S, Liu, X, Nandi, S et al. 2019, 'Origin of Current-Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity', Advanced Functional Materials, vol. 29, no. 44, pp. -.
- Wei, L, Li, S, Nandi, S et al. 2019, 'Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures', Journal of Physics D: Applied Physics, vol. 52, no. 46, pp. 1-5.
- Shiell, T, Wong, S, Yang, W et al. 2019, 'The composition, structure and properties of four different glassy carbons', Journal of Non-crystalline Solids, vol. 522, no. 119561, pp. 1-8.
- Li, S, Liu, X, Nandi, S et al. 2018, 'Anatomy of filamentary threshold switching in amorphous niobium oxide', Nanotechnology, vol. 29, no. 37, pp. 9pp.
- Nandi, S, Venkatachalam, D, Ruffell, S et al. 2018, 'Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation', Nanotechnology, vol. 29, no. 42, pp. 9pp.
- OndiÄ?, L, Varga, M, Pelant, I et al. 2018, 'Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers', Beilstein Journal of Nanotechnology, vol. 9, pp. 2287-2296pp.
- Thompson, M, Drummond, D, Sullivan, J et al. 2018, 'Effect of W self-implantation and He plasma exposure on early-stage defect and bubble formation in tungsten', Nuclear Fusion, vol. 58, no. 6, pp. 1-9.
- Ondič, L, Varga, M, Pelant, I et al. 2017, 'Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission', Scientific Reports, vol. 7, no. 5763, pp. 1-8.
- Jang, C, Kim, J, Lee, D et al. 2017, 'Effect of stopping-layer-assisted boron-ion implantation on the electrical properties of graphene: Interplay between strain and charge?doping', Carbon, vol. 118, pp. 343-347.
- Corr, C, O'Ryan, S, Tanner, C et al. 2017, 'Mechanical properties of tungsten following rhenium ion and helium plasma exposure', Nuclear Materials and Energy, vol. 12, pp. 1336-1341.
- Martin, T, Jones, K, Camillo-Castillo, R et al. 2017, 'Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon', Journal of Materials Science, vol. 52, no. 17, pp. 10387-10392.
- Martin, T, Jones, K, Camillo-Castillo, R et al. 2017, 'Elimination and quantification of oxidation induced interstitial injection via Ge implants', Processes at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017, ed. Hillier, O'Dwyer, Lynch, Wang, Sunkara, Buckley, Etcheberry & Vereecken, The Electrochemical Society, TBC, pp. 135-143 pp.
- Nandi, S, Li, S, Liu, X et al. 2017, 'Temperature dependent frequency tuning of NbOx relaxation oscillators', Applied Physics Letters, vol. 111, no. 20, pp. 1-4.
- Li, S, Liu, X, Nandi, S et al 2017, 'Coupling dynamics of Nb/Nb2O5 relaxation oscillators', Nanotechnology, vol. 28, no. 12, pp. 1-6.
- Marmitt, G,; Nandi, S.; Venkatachalam, D.; Elliman, R.; Vos, M. & Grande, P. 2017, 'Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering', Thin Solid Films, vol. 629, pp. 97-102.
- Mortemousque, P, Rosenius, S, Pica, G et al. 2016, 'Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field', Nanotechnology, vol. 27, no. 49, pp. 1-8.
- Khan, A, Elliman, R, Corr, C et al. 2016, 'Effect of rhenium irradiations on the mechanical properties of tungsten for nuclear fusion applications', Journal of Nuclear Materials, vol. 477, pp. 42-49.
- Wang, X, Berke, K, Rudawski, N et al. 2016, 'Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing', Journal of Applied Physics, vol. 120, no. 2, pp. 025105-1-9.
- Thompson, M, Deslandes, A, Morgan, T et al. 2016, 'Observation of a helium ion energy threshold for retention in tungsten exposed to hydrogen/helium mixture plasma', Nuclear Fusion, vol. 56, no. 10.
- Liu, X, Li, S, Nandi, S et al. 2016, 'Threshold switching and electrical self-oscillation in niobium oxide films', Journal of Applied Physics, vol. 120, no. 12.
- Elliman, R & Williams, J 2015, 'Advances in ion beam modification of semiconductors', Current Opinion in Solid State and Materials Science, vol. 19, no. 1, pp. 49-67.
- Li, S, Liu, X, Nandi, S et al. 2015, 'High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures', Applied Physics Letters, vol. 106, no. 21, pp. 1-4.
- Nandi, S, Liu, X, Venkatachalam, D et al. 2015, 'Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices: The effect of ReRAM integration', Journal of Physics D: Applied Physics, vol. 48, no. 19, pp. 1-8.
- Nandi, S, Liu, X, Venkatachalam, D et al. 2015, 'Self-assembly of an NbO2 interlayer and configurable resistive switching in Pt/Nb/HfO2/Pt structures', Applied Physics Letters, vol. 107, no. 13.
- Nandi, S, Liu, X, Venkatachalam, D et al. 2015, 'Effect of Electrode Roughness on Electroforming in HfO2 and Defect-Induced Moderation of Electric-Field Enhancement', Physical Review Applied, vol. 4, no. 6, pp. 1-11pp.
- Deslandes, A, Guenette, M, Belay, K et al. 2015, 'Diamond structure recovery during ion irradiation at elevated temperatures', Nuclear Instruments and Methods in Physics Research: Section B, vol. 365, pp. 331-335.
- Thomson, A, Wan, Y, Lal, N et al. 2015, 'Graded silicon nitride films: Optics and passivation', Journal of Vacuum Science and Technology A, vol. 33, no. 6, pp. 060610-1 to 060610-5.
- Nawaz, M, Venkatachalam, D & Elliman, R 2014, 'Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics', Current Applied Physics, vol. 14, no. Supplement 1, pp. S88-S92.
- Wong, S, Shalav, A, Ruffell, S et al. 2014, 'Formation of ordered arrays of gold particles by nanoindentation templating', Physica Status Solidi: Rapid Research Letters, vol. 8, no. 1, pp. 48-51.
- Shalav, A & Elliman, R 2014, 'Metallic surface doping of SiOx nanowires', International Journal of Nanotechnology, vol. 11, no. 5-8, pp. 594-600.
- Lee, J, Jang, C, Kim, J et al. 2014, 'Graphene synthesis by C implantation into Cu foils', Carbon, vol. 66, no. January 2014, pp. 267-271.
- Vos, M, Liu, X, Grande, P et al. 2014, 'The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx films', Nuclear Instruments and Methods in Physics Research: Section B, vol. 340, pp. 58-62.
- Mortemousque, P, Berger, S, Sekiguchi, T et al. 2014, 'Hyperfine clock transitions of bismuth donors in silicon detected by spin-dependent recombination', Physical Review B, vol. 89, no. 15, p. 155202.
- Liu, X, Nandi, S, Venkatachalam, D et al. 2014, 'Reduced threshold current in NbO2 selector by engineering device structure', IEEE Electron Device Letters, vol. 35, no. 10, pp. 1055-1057.
- Liu, X, Nandi, S, Venkatachalam, D et al. 2014, 'Finite Element Modeling of Resistive Switching in Nb2O5-based Memory Device', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014), ed. Martyniuk M.Faraone, IEEE, New York, pp. 280-283.
- Ratcliff, T, Shalav, A, Fong, K et al. 2014, 'Influence of implantation damage on emitter recombination', Energy Procedia, vol. 55, pp. 272-279.
- Yang, X, Müller, R, Shalav, A et al. 2014, 'Boron implanted, laser annealed p(+) emitter for n-type interdigitated back-contact solar cells', Energy Procedia, vol. 55, pp. 320-325.
- Ratcliff, T, Fong, K, Shalav, A et al. 2014, 'The effect of annealing ambient on carrier recombination in boron implanted silicon', Physica Status Solidi: Rapid Research Letters, vol. 8, no. 10, pp. 827-830.
- Vos, M, Grande, P, Venkatachalam, D et al. 2014, 'Oxygen Self-Diffusion in HfO2 Studied by Electron Spectroscopy', Physical Review Letters, vol. 112, no. 17, pp. 1-5.
- Darby, B, Yates, B, Kumar, A et al. 2013, 'Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates', ECS Journal of Solid State Science and Technology, vol. 2, no. 4, pp. P130-P133.
- Shalav, A & Elliman, R 2013, 'Volatile CuOH as a precursor for the growth of CuO nanowires', Microelectronic Engineering, vol. 108, pp. 200-203.
- Rudawski, N, Yates, B, Holzworth, M et al. 2013, 'Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries', Journal of Power Sources, vol. 223, pp. 336-340.
- Darby, B, Yates, B, Martin-Bragado, I et al. 2013, 'Substrate orientation dependence on the solid phase epitaxial growth rate of Ge', Journal of Applied Physics, vol. 113, no. 3.
- Grande, P, Vos, M, Venkatachalam, D et al. 2013, 'Determination of thickness and composition of high-k dielectrics using high-energy electrons', Applied Physics Letters, vol. 103, no. 7, pp. 071911/1-4.
- Vos, M, Grande, P, Nandi, S et al. 2013, 'A high-energy electron scattering study of the electronic structure and elemental composition of O-implanted Ta films used for the fabrication of memristor devices', Journal of Applied Physics, vol. 114, no. 7, pp. 073508/ 1-7.
- Yang, X, MacDonald, D, Fell, A et al. 2013, 'Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence', Journal of Applied Physics, vol. 114, no. 5, p. 6.
- Elliman, R, Nawaz, M, Kim, T et al. 2013, 'Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)', Nuclear Instruments and Methods in Physics Research: Section B, vol. 307, pp. 98-101.
- Pyke, D, Elliman, R & McCallum, J 2013, 'Temperature dependence of blistering in hydrogen implanted Si and Ge', Nuclear Instruments and Methods in Physics Research: Section B, vol. 307, pp. 29-32.
- Ruffell, S, Kurunczi, P, England, J et al. 2013, 'Formation and characterization of Ta2O5/TaOx films formed by O ion implantation', Nuclear Instruments and Methods in Physics Research: Section B, vol. 307, pp. 491-494.
- Elliman, R, Kim, T, Shalav, A et al. 2012, 'Controlled Lateral Growth of Silica Nanowires and Coaxial Nanowire Heterostructures', Journal of Physical Chemistry C, vol. 116, no. 5, pp. 3329-3333.
- Elliman, R, Nawaz, M, Venkatachalam, D et al. 2012, 'Resistive Switching on High-K dielectircs for Non-volatile Memory Applications', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 121-122.
- Kim, T, Belay, K, Llewellyn, D et al. 2012, 'Strain Relaxation behaviour in Germanium-on-insulator fabricated by Ion Implantation', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 167-168.
- Venkatachalam, D, Parkinson, P, Ruffell, S et al. 2012, 'Optical imaging of graphene using phase shift interferometry', Australian Institute of Physics Congress (AIP 2012), RMIT Publishing, Melbourne Australia, p. 1.
- Shalav, A, Wong, S, Ruffell, S et al. 2012, 'Arrays of Au nanoparticles on Si formed by nanoindentation and a simple thermal/wipe-off technique', Materials Science Forum, vol. 700, pp. 141-144.
- Rudawski, N, Darby, B, Yates, B et al. 2012, 'Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes', Applied Physics Letters, vol. 100, no. 8.
- Lemaitre, M, Tongay, S, Wang, Z et al. 2012, 'Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing', Applied Physics Letters, vol. 100, no. 19, pp. 193105,1-4.
- Balogh, A, Kourmei, B, Cohen, D et al. 2012, 'Modification, synthesis, and analysis of advanced materials using ion beam techniques', Advances in Material Science and Engineering, vol. 2012.
- Mortemousque, P, Sekiguchi, T, Culan, C et al. 2012, 'Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields', Applied Physics Letters, vol. 101, no. 8, p. 082409.
- Shalav, A, Venkatachalam, D & Elliman, R 2012, 'Fabrication of coaxial nanawire heterostructures: SiOx nanowires with conformal TiO2 coatings', Applied Physics A: Materials Science and Processing, vol. 107, no. 3, pp. 749-754.
- Yang, Y, Shalav, A, Kim, T et al. 2012, 'The effect of annealing temperature, residual O2 partial pressure, and ambient lfow rate on teh growth of SiOx nanowires', Applied Physics A: Materials Science and Processing, vol. 107, no. 4, pp. 885-890.
- Yates, B, Darby, B, Elliman, R et al. 2012, 'Role of nucleation sites on the formation of nanoporous Ge', Applied Physics Letters, vol. 101, no. 13, pp. 131907-1 - 131907-4.
- Shalav, A, Bullock, J, Anderson, P et al. 2012, 'The Mechanical and Photochemical Properties of Titania Coated Silica Nanowires', ECS Journal of Solid State Science and Technology, vol. 1, no. 5, pp. Q114-Q118.
- Yan, K, Wang, R, Vu, K et al. 2012, 'Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films', Optical Materials Express, vol. 2, no. 9, pp. 1270-1277.
- Collin, G, Shalav, A & Elliman, R 2011, 'SiOx/GeOx nanowires grown via the active oxidation of Si/Ge substrates', Materials Science Forum, vol. 700, pp. 133-136.
- Elliman, R 2011, 'Magnetic properties of Co, Ni, Pt and their alloy nanoparticles formed in SiO2 by ion beam synthesis', Nuclear Instruments and Methods in Physics Research: Section B, pp. -.
Projects and Grants
Grants information is drawn from ARIES. To add or update Projects or Grants information please contact your College Research Office.
- Advanced Contact Resistance Engineering (Primary Investigator)
- Quantum Brilliance Research Collaboration 1 (Secondary Investigator)
- NCRIS 2013 Heavy Ion Accelerators (HIA) Project - Phase I (and II) (Secondary Investigator)