The effect of annealing temperature, residual O2 partial pressure, and ambient lfow rate on teh growth of SiOx nanowires
Citation
Yang, Y, Shalav, A, Kim, T et al. 2012, 'The effect of annealing temperature, residual O2 partial pressure, and ambient lfow rate on teh growth of SiOx nanowires', Applied Physics A: Materials Science and Processing, vol. 107, no. 4, pp. 885-890.Year
2012ANU Authors
Fields of Research
- Nanofabrication, Growth And Self Assembly
- Nanomaterials
- Functional Materials
