The effect of annealing temperature, residual O2 partial pressure, and ambient lfow rate on teh growth of SiOx nanowires

Citation

Yang, Y, Shalav, A, Kim, T et al 2012, 'The effect of annealing temperature, residual O2 partial pressure, and ambient lfow rate on teh growth of SiOx nanowires', Applied Physics A: Materials Science and Processing, vol. 107, no. 4, pp. 885-890.

Year

2012

Fields of Research

  • Nanofabrication, Growth And Self Assembly
  • Nanomaterials
  • Functional Materials

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