Reduced threshold current in NbO2 selector by engineering device structure

Citation

Liu, X, Nandi, S, Venkatachalam, D et al 2014, 'Reduced threshold current in NbO2 selector by engineering device structure', IEEE Electron Device Letters, vol. 35, no. 10, pp. 1055-1057.

Year

2014

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Metals And Alloy Materials

Updated:  26 September 2021 / Responsible Officer:  Director (Research Services Division) / Page Contact:  Researchers