Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

Citation

Elliman, R, Nawaz, M, Kim, T et al 2013, 'Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)', Nuclear Instruments and Methods in Physics Research: Section B, vol. 307, pp. 98-101.

Year

2013

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Functional Materials

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