Strain Relaxation behaviour in Germanium-on-insulator fabricated by Ion Implantation

Citation

Kim, T, Belay, K, Llewellyn, D et al 2012, 'Strain Relaxation behaviour in Germanium-on-insulator fabricated by Ion Implantation', Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), Institute of Electrical and Electronics Engineers (IEEE Inc), New Jersey USA, pp. 167-168.

Year

2012

Fields of Research

  • Surfaces And Structural Properties Of Condensed Matter
  • Metals And Alloy Materials
  • Nanoscale Characterisation

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